User Guide

PAMS
Technical Documentation
NSE–8/9
System Module
Page 2– 60
Issue 1 07/99
MAD2PR1 interfaces to the RAM via a parallel memory bus which
consists of 17 address lines, MCUAd(16:0) and 8 data lines, MCUDA(7:0)
both shared with the Flash memory bus. Read and write strobes and two
chip selects, one of which is the system reset.
EEPROM Memory
An EEPROM is used for a nonvolatile data memory to store the tuning
parameters and phone setup information. The short code memory for
storing user defined information is also implemented in the EEPROM. The
EEPROM size used is 16Kbytes. The memory is accessed through a
serial IIC bus and the default package is SO8.
FLASH Memory
The MCU program code resides in the program memory. The program
memory size is 16 Mbits (1024kx16bit) in the uBGA48 –package.
The flash memory has a power down pin that is kept low,by ESysResetX,
during the power up phase of the flash to ensure that the device is
powered up in the correct state, read only. The power down pin is utilized
in the system sleep mode by connecting the ExtSysResetX to the flash
power down pin to minimize the flash power consumption during the
sleep.
MAD2PR1 interfaces to the Flash via a parallel memory bus which
consists of 20 address lines, MCUAd(20:1) and 16 data lines,
MCUDA(7:0) for LSB and MCUDA(15:8) for MSB. Read and write strobes
and two chip selects, one of which is the system reset, ExtSysResetX.
The flash is HW protected against accidental writes by, R307, pull down
on Vpp.
Flash Programming
The phone have to be connected to the flash loading adapter FLA–5 so
that supply voltage for the phone and data transmission lines can be
supplied from/to FLA–5. When FLA–5 switches supply voltage to the
phone, the program execution starts from the BOOT ROM and the MCU
investigates in the early start–up sequence if the flash prommer is
connected.