Datasheet

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
20 Vdc
Collector–Base Voltage V
CBO
30 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q JA
200 °C/W
Thermal Resistance, Junction to Case
R
q JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
20 — — Vdc
Collector–Base Breakdown Voltage (I
C
= 10 m Adc, I
E
= 0)
V
(BR)CBO
30 — — Vdc
Emitter–Base Breakdown Voltage (I
E
= 10 m Adc, I
C
= 0)
V
(BR)EBO
3.0 — — Vdc
Collector Cutoff Current (V
CB
= 20 Vdc, I
E
= 0) I
CBO
— — 100 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 20 mAdc, V
CE
= 10 Vdc)
h
FE
35
40
—
—
—
—
—
Collector–Emitter Saturation Voltage (I
C
= 30 mAdc, I
B
= 2.0 mAdc) V
CE(sat)
— — 1.0 Vdc
Base–Emitter Saturation Voltage (I
C
= 30 mAdc, I
B
= 2.0 mAdc) V
BE(sat)
— — 1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
(I
C
= 30 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
700
600
—
—
—
—
MHz
Common Emitter Feedback Capacitance
(V
CB
= 10 Vdc, P
f
= 0, f = 10 MHz)
C
re
— 0.65 — pF
Noise Figure (I
C
= 4.0 mA, V
CE
= 10 V, R
S
= 50 Ω, f = 200 MHz) N
f
— 3.0 — dB
Order this document
by BF959/D

SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 21
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER