Data Sheet

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1. Product profile

1.1 General description

Intermediate level N-channel and P-channel complementary pair enhancement mode

Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This

product is designed and qualified for use in computing, communications, consumer and

industrial applications only.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

 Motor and actuator drivers

 Power management

 Synchronized rectification

1.4 Quick reference data

PHC21025

Complementary intermediate level FET

Rev. 04 — 17 March 2011 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 150 °C;

N-channel

--30V

≥ 25 °C; T

≤ 150 °C;

P-channel

---30V

drain current T

≤ 80 °C; P-channel - - -2.3 A

≤ 80 °C; N-channel - - 3.5 A

tot

total power dissipation T

amb

=25°C

[1]

--1W

Static characteristics

DSon

drain-source on-state

resistance

=-10V; I

=-1A;

= 25 °C; P-channel;

see Figure 16

; see Figure 19

- 0.22 0.25 Ω

=10V; I

=2.2A;

= 25 °C; N-channel;

see Figure 15; see Figure 18

- 0.08 0.1 Ω

Summary of content (16 pages)

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PHC21025 Complementary intermediate level FET Rev. 04 — 17 March 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.
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PHC21025 Nexperia Complementary intermediate level FET Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit VGS = -10 V; ID = -2.3 A; VDS = -15 V; Tj = 25 °C; P-channel; see Figure 12 - 3 - nC VGS = 10 V; ID = 2.3 A; VDS = 15 V; Tj = 25 °C; N-channel; see Figure 11 - 2.5 - nC Dynamic characteristics QGD [1] gate-drain charge Maximum permissible dissipation per MOS transistor.
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PHC21025 Nexperia Complementary intermediate level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel - 30 V Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel - -30 V VGS gate-source voltage - - V VGSO gate-source voltage open drain -20 20 V ID drain current Tsp ≤ 80 °C; P-channel - -2.
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PHC21025 Nexperia Complementary intermediate level FET mlb836 2.5 mlb833 102 Ptot (W) 2.0 ID (A) (1) 10 tp = 10μs 1.5 1 1 ms 1.0 δ= P tp T 10−1 0.5 0 50 100 150 Ts (°C) T 10−2 10−1 200 0.1 s t tp 0 DC 1 10 VDS (V) 102 δ = 0.01. Ts = 80 °C. (1) RDSon limitation. Fig 1. Power derating curve Fig 2. SOAR; N-channel mbe155 −102 ID (A) −10 tp = (1) 10 μs −1 1 ms δ= P −10−1 DC 0.1 s t tp −10−2 tp T T −10−1 −1 −10 VDS (V) −102 δ = 0.01 Ts = 80 °C.
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PHC21025 Nexperia Complementary intermediate level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - - 35 K/W mbe152 102 δ= 0.75 0.5 0.33 Rth j-s (K/W) 10 0.2 0.1 0.05 1 δ= P 0.02 tp T 0.01 0 t tp T 10−1 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) Fig 4.
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PHC21025 Nexperia Complementary intermediate level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = -10 µA; VGS = 0 V; Tj = 25 °C; P-channel -30 - - V ID = 10 µA; VGS = 0 V; Tj = 25 °C; N-channel 30 - - V ID = -1 mA; VDS = VGS; Tj = 25 °C; P-channel; see Figure 17 -1 - -2.8 V ID = 1 mA; VDS = VGS; Tj = 25 °C; N-channel; see Figure 17 1 - 2.
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PHC21025 Nexperia Complementary intermediate level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit QGS gate-source charge ID = 2.3 A; VDS = 15 V; VGS = 10 V; Tj = 25 °C; N-channel; see Figure 11 - 1 - nC ID = -2.3 A; VDS = -15 V; VGS = -10 V; Tj = 25 °C; P-channel; see Figure 12 - 1 - nC ID = -2.3 A; VDS = -15 V; VGS = -10 V; Tj = 25 °C; P-channel; see Figure 12 - 3 - nC ID = 2.
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PHC21025 Nexperia Complementary intermediate level FET mbe137 600 C (pF) mbe144 600 C (pF) 400 400 Ciss Ciss 200 200 Coss Coss Crss Crss 0 0 0 Fig 5. 10 20 VDS (V) Capacitance as a function of drain-source voltage; N-channel; typical values mbe142 16 VGS = 10 V 6 V ID (A) −10 0 30 Fig 6. −20 VDS (V) −30 Capacitance as a function of drain-source voltage; P-channel; typical values mbe154 −10 VGS = −10 V ID (A) −8 −6 V −7.5 V 12 5V −5 V −6 8 4.5 V −4.
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PHC21025 Nexperia Complementary intermediate level FET mbe141 16 mbe157 −10 ID (A) −8 ID (A) 12 −6 8 −4 4 −2 0 0 0 Fig 9. 2 4 6 VGS (V) Transfer characteristics: drain current as a function of gate-source voltage; N-channel; typical values mbe136 10 6 −6 4 −4 2 −2 4 6 8 0 QG (nC) Fig 11. Gate-source voltage as a function of gate charge; N-channel; typical values PHC21025 Product data sheet VGS (V) −8 mbe145 0 2 −6 −10 VGS (V) −8 0 −4 Fig 10.
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PHC21025 Nexperia Complementary intermediate level FET mbe159 6 mbe158 −6 IS (A) IS (A) −4 4 (1) (2) (3) (1) (2) (3) −2 2 0 0 0 0.5 1 VSD (V) 1.5 −0.5 0 VGD = 0. VGD = 0. (1) Tj = 150 °C. (1) Tj = 150 °C. (2) Tj = 25 °C. (2) Tj = 25 °C. (3) Tj = -55 °C. (3) Tj = -55 °C. Fig 13. Source current as a function of source-drain voltage; N-channel; typical values mda217 104 −1 −1.5 VSD (V) −2 Fig 14.
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PHC21025 Nexperia Complementary intermediate level FET mbe138 1.2 mbe139 1.8 k k 1.1 1.6 1.0 1.4 (1) (2) 0.9 1.2 0.8 1.0 0.7 0.8 0.6 −50 0 50 100 Tj (°C) 0.6 −50 150 0 50 100 Tj (°C) 150 Typical RDSon at: Typical VGSth at ID = 1 mA; VDS = VGS = VGSth. (1) ID = 2.2 A; VGS = 10 V. (2) ID = 1 A; VGS = 4.5 V. Fig 17. Temperature coefficient of gate-source threshold voltage Fig 18. Temperature coefficient of drain-source on-state resistance; N-channel mbe146 1.8 k 1.
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PHC21025 Nexperia Complementary intermediate level FET 7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.
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PHC21025 Nexperia Complementary intermediate level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PHC21025 v.4 20110317 Product data sheet - PHC21025 v.3 - PHC21025 v.2 Modifications: PHC21025 v.3 PHC21025 Product data sheet • Various changes to content. 20101217 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 © Nexperia B.V. 2017.
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PHC21025 Nexperia Complementary intermediate level FET 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PHC21025 Nexperia Complementary intermediate level FET agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.
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Nexperia PHC21025 Complementary intermediate level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . .