Data Sheet

1999 May 25 3
NXP Semiconductors Product data sheet
General purpose diodes BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BAV20 − 200 V
BAV21 − 250 V
V
R
continuous peak reverse voltage
BAV20 − 150 V
BAV21 − 200 V
I
F
continuous forward current see Fig.2; note 1 − 250 mA
I
FRM
repetitive peak forward current − 625 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t = 1 μs − 9 A
t = 100 μs − 3 A
t = 1 s − 1 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 400 mW
T
stg
storage temperature −65 +175 °C
T
j
junction temperature − 175 °C