Data Sheet

2004 Jan 26 3
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 1 mA − 0.9 V
I
F
= 10 mA − 1 V
I
F
= 50 mA − 1.1 V
I
F
= 150 mA − 1.25 V
I
R
reverse current see Fig.5
V
R
= 75 V 0.003 5 nA
V
R
= 75 V; T
j
= 150 °C 3 80 nA
C
d
diode capacitance V
R
= 0; f = 1 MHz; see Fig.6 2 − pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA; see Fig.7
0.8 3 µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 450 K/W