Data Sheet

2004 Jan 26 2
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• Low-leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
Fig.1 Simplified outline (SOD323) (SC-76) and
symbol.
Marking code: D4.
The marking bar indicates the cathode.
handbook, halfpage
12
MAM406
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BAS416 − plastic surface mounted package; 2 leads SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current see Fig.2 − 200 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t = 1 µs − 4 A
t = 1 ms − 1 A
t = 1 s − 0.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C