- National Semiconductor High-Performance Microcontrollers Specification Sheet
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Total Allowable Source or Sink Current 100 mA
Storage Temperature Range
b
65
§
Cto
a
150
§
C
Lead Temperature (Soldering, 10 sec.) 300
§
C
V
CC
with Respect to GND
b
0.5V to 7.0V
All Other Pins (V
CC
a
0.5V) to (GND
b
0.5V)
Note:
Absolute maximum ratings indicate limits beyond
which damage to the device may occur. DC and AC electri-
cal specifications are not ensured when operating the de-
vice at absolute maximum ratings.
DC Electrical Characteristics
V
CC
e
5.0V
g
5% unless otherwise specified, T
A
eb
55
§
Cto
a
125
§
C for HPC167064 and V
CC
e
5.0V
g
10% unless
otherwise specified, T
A
e
0
§
Cto70
§
C for HPC467064
Symbol Parameter Test Conditions Min Max Units
I
CC
1
Supply Current V
CC
e
max, f
IN
e
30.0 MHz (Note 1) 85 mA
V
CC
e
max, f
IN
e
20.0 MHz (Note 1) 70 mA
V
CC
e
max, f
IN
e
2.0 MHz (Note 1) 40 mA
I
CC
2
IDLE Mode Current V
CC
e
max, f
IN
e
30.0 MHz (Note 1) 6.0 mA
V
CC
e
max, f
IN
e
20.0 MHz, (Note 1) 4.5 mA
V
CC
e
max, f
IN
e
2.0 MHz, (Note 1) 1 mA
I
CC
3
HALT Mode Current V
CC
e
max, f
IN
e
0 kHz, (Note 1) 400 mA
V
CC
e
2.5V, f
IN
e
0 kHz, (Note 1) 100 mA
INPUT VOLTAGE LEVELS FOR SCHMITT TRIGGERED INPUTS RESET, NMI, AND WO; AND ALSO CKI
V
IH1 Logic High 0.9 V
CC
V
V
IL1 Logic Low 0.1 V
CC
V
ALL OTHER INPUTS
V
IH2
Logic High 0.7 V
CC
* V
V
IL2
Logic Low * 0.2 V
CC
V
I
LI1
Input Leakage Current V
IN
e
0 and V
IN
e
V
CC
(Note 4)
g
2 mA
I
LI2
Input Leakage Current RDY/HLD, EXUI V
IN
e
0
b
3
b
50 mA
I
LI3
Input Leakage Current B12 RESET
e
0, V
IN
e
V
CC
0.5 7 mA
I
LI4
Input Leakage Current EXM V
IN
e
0 and V
IN
e
V
CC
(Note 4)
g
10 mA
C
I
Input Capacitance (Note 2) 10 pF
C
IO
I/O Capacitance (Note 2) 20 pF
OUTPUT VOLTAGE LEVELS
V
OH1
Logic High (CMOS) I
OH
eb
10 mA (Note 2) V
CC
b
0.1
0.1 V
V
OL1
Logic Low (CMOS) I
OH
e
10 mA (Note 2)
V
OH2
Port A/B Drive, CK2 I
OH
eb
7 mA 2.4
0.4 V
V
OL2
(A0– A15, B10, B11, B12, B15) I
OL
e
3mA
V
OH3
Other Port Pin Drive, WO (open drain) I
OH
eb
1.6 mA (except WO) 2.4
0.4 V
V
OL3
(B0– B9, B13, B14, P0–P3) I
OL
e
0.5 mA
V
OH4
ST1 and ST2 Drive I
OH
eb
6 mA 2.4
0.4 V
V
OL4
I
OL
e
1.6 mA
V
OH5
Port A/B Drive (A0– 15, B10, B11, B12, B15) I
OH
eb
1 mA 2.4
0.4 V
V
OL5
when used as External Address/Data Bus I
OL
e
3mA
V
RAM
RAM Keep-Alive Voltage (Note 3) 2.5 V
CC
V
I
OZ
TRI-STATE
É
Leakage Current V
IN
e
0 and V
IN
e
V
CC
g
5 mA
Note 1: I
CC
1
,I
CC
2
,I
CC
3
measured with no external drive (I
OH
and I
OL
e
0, I
IH
,I
IL
e
0 and EXM
e
V
CC
). I
CC1
is measured with RESET
e
GND. I
CC3
is measured
with NMI
e
V
CC
. CKI driven to V
IH1
and V
IL1
with rise and fall times less than 10 ns.
Note 2: This is guaranteed by design and not tested.
Note 3: Test duration is 100 ms.
Note 4: The EPROM mode of operation for this device requires high voltage input on pins EXM/V
PP
, I3, I4, I5, I6 and I7. This will increase the input leakage current
above the normal specification when driven to voltages greater than V
CC
a
0.3V.
*See NORMAL RUNNING MODE.
2