Datasheet

Table Of Contents
2015-2016 Microchip Technology Inc. DS20005426B-page 5
MCP9600
INPUT/OUTPUT PIN DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground, T
A
= -40°C to +125°C
(where: T
A
=T
C
, defined as Device Ambient Temperature).
Parameters Sym. Min. Typ. Max. Units Conditions
Serial Input/Output and I
2
C Slave Address Input (ADDR)
Input (SCL, SDA)
High-Level Voltage V
IH
0.7V
DD
——V
Low-Level Voltage V
IL
——0.3V
DD
V
Input Current I
LEAK
—— ±2µA
Output (SDA)
Low-Level Voltage V
OL
——0.4VI
OL
= 3 mA
High-Level Current (leakage) I
OH
—— 1µAV
OH
= V
DD
Low-Level Current I
OL
6—mAV
OL
= 0.6V
Capacitance C
IN
—5 pF
I
2
C Slave Address Selection Levels (Note 1)
Command Byte <1100 000x>V
ADDR
GND V Address = 0
Command Byte <1100 001x>V
ADDR_L
(Note 2)
V
ADDR_TYP
(Note 2)
V
ADDR_H
(Note 2)
Address = 1
Command Byte <1100 010x>Address = 2
Command Byte <1100 011x>Address = 3
Command Byte <1100 100x>Address = 4
Command Byte <1100 101x>Address = 5
Command Byte <1100 110x>Address = 6
Command Byte <1100 111x>—V
DD
Address = 7
SDA and SCLK Inputs
Hysteresis V
HYST
—0.05V
DD
—VV
DD
> 2V
Spike Suppression T
SP
—50 ns
Note 1: The ADDR pin can be tied to V
DD
or V
SS
. For additional slave addresses, resistive divider network can be
used to set voltage levels that are rationed to V
DD
. The device supports up to 8 levels (see Section 6.3.1
“I2C Addressing” for recommended resistor values).
2: V
ADDR_TYP
=Address*V
DD
/8 + V
DD
/16,
V
ADDR_L
=V
ADDR_TYP
-V
DD
/32, and
V
ADDR_H
=V
ADDR_TYP
+V
DD
/32 (where: Address = 1, 2, 3, 4, 5, 6).
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 +125 °C Note 1
Operating Temperature Range T
A
-40 +125 °C
Storage Temperature Range T
A
-65 +150 °C
Thermal Package Resistances
Thermal Resistance, MQFN
JA
38.8 °C/W
Note 1: Operation in this range must not cause T
J
to exceed the Maximum Junction Temperature (+150°C).