Datasheet

Table Of Contents
MCP9600
DS20005426B-page 4 2015-2016 Microchip Technology Inc.
Sensor Characteristics
T
C
and T
H
Temperature Resolution T
RES
±0.0625 °C With max. Resolution
Sampling Rate (T
A
=+25°C) t
CONV
320 ms 18-bit Resolution
80 ms 16-bit Resolution
20 ms 14-bit Resolution
5 ms 12-bit Resolution
Temperature Calculation Time t
CALC
—12msT
A
= +25°C
Thermocouple Input
Offset Error
V
OERR
—±2µV
Offset Error Drift
V
OERR_DRF
—50nV/°C
Full-Scale Gain Error
G
ERR
——±0.04%FST
A
= 0°C to +85°C
Full-Scale Gain Error Drift
G
ERR_DRF
±0.01 %FS
Full-Scale Integral Nonlinearity INL 10 ppm
Voltage Resolution V
RES
2 µV 18-bit Resolution
Differential Mode Range V
IN_DF
-250 +250 mV ADC input range
Differential Mode Impedance Z
IN_DF
300 k
Common-Mode Range V
IN_CM
V
DD
-0.3 V
DD
+0.3 V (Note 3)
Common-Mode Impedance Z
IN_CM
—25M
Common-Mode Rejection Ratio CMRR 105 dB
Power Supply Rejection Ratio PSRR 60 dB
Line Regulation V
Line_R
—0.2°C/V
Alert 1, 2, 3, 4 Outputs
Low-Level Voltage V
OL
——0.4VI
OL
= 3 mA
High-Level Voltage V
OH
V
DD
-0.5
——VI
OH
= 3 mA
Operating Voltage and Current
Operating Voltage V
DD
2.7 5.5 V
I
2
C Inactive Current I
DD
—0.30.5mAV
DD
=3.3V, T
A
= 85°C
I
2
C Active Current or during t
CALC
—1.52.5mA
Shutdown Current I
SHDN
—2 5µAI
2
C Inactive
Power On Reset (POR) Thresholds V
POR
1.0 2.1 2.6 V Rising/Falling V
DD
Thermal Response
5x5 mm MQFN Package (Cold-Junction) t
RSP
3 s Time to 63%, +25°C
(Air) to +125°C (oil
bath), 2x2 inch PCB
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground, T
A
= -40°C to +125°C
(where: T
A
=T
C
, defined as Device Ambient Temperature).
Parameters Sym. Min. Typ. Max. Unit Conditions
Note 1:
The T
_ACY
temperature accuracy specification is defined as the device accuracy to the NIST ITS-90
Thermocouple EMF to Degree Celsius conversion Database. T
is also defined as the temperature difference
between the Hot and Cold Junctions or temperatures from the NIST ITS-90 database.
2:
The device measures temperature below the specified range, however the sensitivity to changes in temperature
reduces exponentially. Type R and S measure down to -50°C, or -0.226mV
EMF
and -0.235mV
EMF
, respectively.
Type B measures down to 500°C or 1.242mV
EMF
(see Figures 2-7, 2-8, 2-14 and Figures 2-10, 2-11 and 2-17).
3: Exceeding the V
IN_CM
input range may cause leakage current through the ESD protection diodes at the
thermocouple input pins. This parameter is characterized but not production tested.