Datasheet

Electrical Characteristics
152 Intel
®
82845G/82845GL/82845GV GMCH Datasheet
NOTES:
1. Crossing voltage is defined as the instantaneous voltage value when the rising edge of HCLKP equals the
falling edge of HCLKN.
2. V
IH(Ave)
is the statistical average of the V
IH
measured by the oscilloscope.
3. V
IH(Ave)
can be measured directly using “Vtop” on Agilent* scopes and “High” on Tektronix* scopes.
4. The crossing point must meet the absolute and relative crossing point specifications simultaneously.
5. V
Cross(Rel)
Maximum = 0.250+0.5(V
IH(Ave)
–0.71); V
Cross(Rel)
Minimum = 0.550+0.5(V
IH(Ave)
–0.71). See
Figure 6-1.
3.3V SDR System Memory: Functional Operating Range (VCC=3.3V±5%)
V
IL_SDR
(p,r) Input Low Voltage
SMVREF
(SDR)–0.350
V
V
IH_SDR
(p,r) Input High Voltage
SMVREF
(SDR)+0.350
V
V
OL_SDR
(p,q) Output Low Voltage 0.4 V
V
OH_SDR
(p,q) Output High Voltage 2.4 V
I
OL_SDR
(p,q) Output Low Current 4 mA @V
OL_SDR
max
I
OH_SDR
(p,q) Output High Current -4 mA @V
OH_SDR
max
I
LEAK_SDR
(p,r) Input Leakage Current ±10 µA
0<Vin<
VCCSM(SDR)
C
IN_SDR
(p,r) Input Capacitance 5.5 pF F
C
=1 MHz
3.3V Synchronization signals: Functional Operating Range (VCC=3.3V±5%)
V
IH
(t) Output High Voltage 2.4 3.465 V
V
IL
(t) Output Low Voltage 0.0 0.5 V
I
OH
(t) Output High Current -8 MA
I
OL
(t) Output Low Current 8 mA
Clocks and Miscellaneous Signals
V
IL
(y) 3.3 V CMOS Input Low Voltage 0.8 V
V
IH
(y) 3.3 V CMOS Input High Voltage 2.0 V
V
OL
(y) 3.3 V CMOS Output Low Voltage 0.4 V
V
OH
(y) 3.3 V CMOS Output High Voltage 2.4 V
I
OL
(y) 3.3 V CMOS Output Low Current 4 mA @V
OL
max
I
OH
(y) 3.3 V CMOS Output High Current -4 mA @V
OH
min
I
LEAK
(y) 3.3 V CMOS Input Leakage Current ±10 µA 0<Vin<VCC3
C
IN
(y) 3.3 V CMOS Input Capacitance 5.5 pF F
C
=1 MHz
V
Cross(Abs)
(j) Absolute Crossing Voltage 0.250 0.550 V 1,2,4,5
V
Cross(Rel)
(j) Relative Crossing Voltage Note 5 Note 5 V 1,2,3,4,5
Table 6-6. DC Characteristics (Sheet 2 of 2)
Symbol
Signal
Group
Parameter Min Nom Max Unit Notes