Datasheet

Intel
®
82845G/82845GL/82845GV GMCH Datasheet 151
Electrical Characteristics
Table 6-6. DC Characteristics (Sheet 1 of 2)
Symbol
Signal
Group
Parameter Min Nom Max Unit Notes
1.5 V AGP and Intel
®
DVO Interface: Functional Operating Range (VCC=1.5 V ± 5%)
V
IL_AGP
(a,b,w) AGP/DVO Input Low Voltage –0.5 0.4VDDQ V
V
IH_AGP
(a,b,w) AGP/DVO Input High Voltage 0.6VDDQ VDDQ+0.5 V
V
OL_AGP
(a,c,x) AGP/DVO Output Low Voltage 0.15VDDQ V Iol = 1 mA
V
OH_AGP
(a,c,x) AGP/DVO Output High Voltage 0.85VDDQ V Ioh = -0.2 mA
I
LEAK_AGP
(a,b,w) AGP/DVO Input Leakage Current ±10 µA 0<Vin<VCC1_5
C
IN_AGP
(a,b,w) AGP/DVO Input Capacitance 4 pF F
C
=1 MHz
1.5 V Hub Interface: Functional Operating Range (VCC=1.5 V ± 5%)
V
IL_HI
(e) Hub Interface Input Low Voltage -0.3 HI_VREF–0.1 V
V
IH_HI
(e) Hub Interface Input High Voltage HI_VREF+0.1 1.2 V
V
OL_HI
(e) Hub Interface Output Low Voltage 0.066 V I
OL
= 1 mA
V
OH_HI
(e) Hub Interface Output High Voltage 0.6 1.2 V I
OUT
=0.7/RCOMP
I
LEAK_HI
(e) Hub Interface Input Leakage Current 25 µA
C
IN_HI
(e) Hub Interface Input Capacitance 5 pF F
C
=1 MHz
VTT DC Characteristics: Functional Operating Range (VTT= 1.15 V – 1.75 V)
V
IL_AGTL+
(g,h) Host AGTL+ Input Low Voltage
(2/3*VTT) –
0.1*GTLREF
V
V
IH_AGTL+
(g,h) Host AGTL+ Input High Voltage
(2/3*VTT) +
0.1*GTLREF
V
V
OL_AGTL+
(g,I) Host AGTL+ Output Low Voltage 1/3*VTT–0.1 1/3*VTT 1/3*VTT+0.1 V
V
OH_AGTL+
(g,I) Host AGTL+ Output High Voltage VTT–0.1 VTT V
I
OL_AGTL+
(g,I) Host AGTL+ Output Low Current
VTT
max
/
0.75Rtt
min
mA Rtt
min
=45 Ω
I
LEAK_AGTL+
(g,h) Host AGTL+ Input Leakage Current ± 10 µAV
OL
<Vpad<VTT
C
PAD_AGTL+
(g,h)
Host AGTL+ Input
Capacitance
13.5pFF
C
=1 MHz
2.5 V DDR System Memory: Functional Operating Range (VCC=2.5 V±5%)
V
IL_DDR(DC)
(l,n) DDR Input Low Voltage -0.1*VCC
SMVREF
(DDR) – 0.15
V
V
IH_DDR(DC)
(l,n) DDR Input High Voltage
SMVREF
(DDR)
+ 0.15
1.1*VCC V
V
IL_DDR(AC)
(l,n) DDR Input Low Voltage –0.1*VCC
SMVREF
(DDR)–0.31
V
V
IH_DDR(AC)
(l,n) DDR Input High Voltage
SMVREF
(DDR)
+ 0.31
1.1*VCC V
V
OL_DDR
(l,m) DDR Output Low Voltage 0.6 V IOL = 13 mA
V
OH_DDR
(l,m) DDR Output High Voltage 1.9 V IOH = 13 mA
I
Leak_DDR
(l,n) Input Leakage Current ±10 uA
C
IN_DDR
(l,n) DDR Input/Output Pin Capacitance 5.5 pF F
C
=1 MHz