Specifications

5
Dec. 20
Mitsubishi IPM-series Application Note
3. Term Explanation
General 1
Symbol Definition
IGBT Insulated Gate Bipolar Transistor
FWDi Free Wheeling Diode Anti-parallel to the IGBT
IPM Intelligent Power Module
tdead Dead Time Low side turn-off to high Side turn-on & High Side turn-off to low side turn-on
IPM Motor Interior Permanent Magnet Motor
(PC) Photo-Coupler
PC Programable Controller
CMR Common Mode Noise Reduction The maximum rise ratio of common mode voltage
CM
H
The maximum rise ratio of common mode voltage at the specific high level
CM
L
The maximum rise ratio of common mode voltage at the specific low level
CTR Current Transfer Ratio the ratio of the output current to the input current
General 2
Symbol Parameter Definition
T
a
Ambient Temperature Atmosphere temperature without being subject to thermal source
T
c
Case Temperature Case temperature measured at specified point
Absolute maximum Ratings
Symbol Parameter Definition
V
CES
Collector-Emitter Blocking Voltage Maximum Off-state collector-emitter voltage with gate-emitter shorted
I
C
Continuous Collector Current Maximum collector current – DC
I
CM
Peak Collector Current Repetitive Peak collector current, Tj≤150°C
I
E
Continuous Diode Current Maximum diode current – DC
I
EM
Peak Diode Current Repetitive Diode peak current, Tj≤150°C
P
C
Power Dissipation Maximum power dissipation, per device, T
C
=25°C
T
j
Junction Temperature Allowable range of IGBT junction temperature during operation
T
stg
Storage Temperature
Allowable range of temperature within which the module may be stored or
transported without being subject to electrical load.
V
iso
Isolation Voltage
Minimum RMS isolation voltage capability applied electric terminal to base
plate, 1 minute duration
- Mounting Torque Allowable tightening torque for terminal and mounting screws
̪I
E
and I
F
are using by the difference of the connection and so on like the following figure.
Electrical Characteristics
Symbol Parameter Definition
I
CES
Collector-Emitter Leakage
Current
I
C
at V
CE
= V
CES
, V
GE
= 0V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
CE
at I
C
= rated I
C
and V
GE
= 15V
tc(on)
Turn-on Delay Time Time from I
C
=10% to V
CE
=10% of final value
tc(off) Turn-off Delay Time Time from V
CE
=10% of final value to I
C
=10% of final value
E
on
Turn-on Switching loss
Energy dissipated inside the IGBT during the turn-on of a single collector
current pulse. Integral time starts from the 10% rise point of the collector
current and ends at the 10% of the collector-emitter voltage point.
E
off
Turn-off Switching loss
Energy dissipated inside the IGBT during the turn-off of a single collector
current pulse. Integral time starts from the 10% rise point of the
collector-emitter voltage and ends at the specified low collector current point,
x% of Ic.
t
rr
Diode Reverse Recovery Time
Time from I
C
=0A to projection of zero I
C
from Irr and 0.5Irr points with I
E
=
rated I
C
.
V
EC
Forward Voltage Drop of Diode V
EC
at -I
C
= rated Ic
R
th
Thermal Resistance
The rise of junction temperature per unit of power applied for a given time
period
R
th(j-c)
Thermal Resistance, Junction to
Case
I
C
conducting to establish thermal equilibrium
R
th(c-f)
Thermal Resistance, Case to Fin I
C
conducting to establish thermal equilibrium lubricated
Term Explanation