Specifications

16
Dec. 20
Mitsubishi IPM-series Application Note
7-4. Reliability Testing
7-4-1 Reliability Testing Procedures
High reliability standards are assured with Mitsubishi semiconductor devices through the rigorous quality-control inspections,
which the devices are subjected to in the design and manufacturing stages, and through the quality-assurance inspections run on
each production lot. Numerous reliability tests have been implemented in order to maintain this standard of reliability.
This section provides an overview of the reliability testing of thyristor devices. Test parameters are shown in Table 7.1, and as
noted, conform to the procedures specified by the Japan Electronics and Information Technology Association (JEITA) handbook.
(Related standards: International Electro technical Commission (IEC))
7-4-2 Results of Reliability Test of IGBT Module
Table 7.2 lists the results of the reliability tests performed on PM75RLA060, a resin sealed type with current rating up to 75A to
date. Failure criterion information is noted in Table 7.3.
Table7.1. Mitsubishi Power Module Reliability Testing
Test Parameter Test Method Test Conditions
Thermal Shock ED-4701 B-141 [Condition A] 100°C : 5 min, 0°C: 5 minutes, 10 cycles
Temperature Cycling ޖ B-131 Tstg min 60 min㨪Tstg max 60 min, 10 cycles
Vibration ޖ A-121 [Condition B] 10㨪500Hz/15 minute, 98.1m/s
2
, 6h
Robustness of Termination ޖ A-111-Σ 9.8~40N, 10±1s
Solder Heat Resistance ޖ A-132 [Condition A] 260±5°C, 10±1s, Rosin flux used
Solderability ޖ A-131 [Condition A] 235±5°C, 5±0.5s, Rosin flux used
Environmental
Test
Mounting Torque ޖ A-112-Τ M5:1.96~3.5N㨯m, 10±1s
High Temperature Storage ޖ B-111 Ta=Tstg max, 1000 h
Low Temperature Storage ޖ B-112 Ta=Tstg min, 1000 h
Wetproof ޖ B-121 [Condition B] Ta=60°C, RH=90%, 1000h
Intermittent Current Flow ޖ 㧙 ǍTc=50°C(ǍTc=100°C), 5000 cycles
High Temperature Reverse Bias ޖ 㧙 Ta=Tstg max, VCE=85%VCES, VGE=0V, 1000h
Endurance
Test
High Temperature Gate Bias ޖ 㧙 Ta=Tstg max, VCE=20V, VGE=0V, 1000h
*:Environmental and resistance testing conforms to standards specified in JEITA ED-4701 for discrete semiconductor devices.
Table7.2. PM75RLA060 Reliability Test Results
Test Parameter Test Method Test Conditions
No of
Samples
No of
Failures
Thermal Shock ED-4701 B-141 [Condition A] 100°C(5min), 0°C(5min), 10 cycles 5 0
Temperature Cycling B-131 -40°C(60 min)~125°C(60 min), 10 cycles 5 0
Vibration A-121 [Condition B] 10~500Hz / 15 min, 98.1m/s
2
, 6h 5 0
Robustness of Termination A-111-Σ 9.8N, 10±1 s 5 0
Environmental
Test
Mounting Torque A-112-Τ
Mounting Screws:M5, 3.5N㨯m, 10±1 s
Main Terminal Screws:M5, 3.5N㨯m, 10±1 s
5 0
High Temperature Storage B-111 Ta=125°C, 1000h 5 0
Low Temperature Storage B-112 Ta=-40°C, 1000h 5 0
Wetproof B-121 Ta=60°C, RH=90%, 1000 h 5 0
Intermittent Current Flow 㧙 Ta=50~100°C, , 5000h 5 0
Endurance
Test
High Temperature Reverse Bias 㧙 Ta=125°C, VCES=510V, 1000h 5 0
Talbe7.3. PM75RLA060 Failure Criterion
Failure Criterion
Test Parameter Test Conditions
Lower Limit Upper Limit
Note
ICES VCE=600V, VD=0V 㧙 U.S.L2.0
VCE(sat) IC=75A, VD=15V 㧙 U.S.L1.2
VEC -IC=75A, VD=0V 㧙 U.S.L1.2
SC VD=15V,VCIN=0V L.S.L0.9 㧙
UV trip L.S.L0.9 㧙
Electrical Stress AC2500V 1 min Insulation breakdown
Note. U.S.L: Upper Specification Limit / L.S.L: Lower Specification Limit
Reliability