Datasheet

PIC18F87J50 FAMILY

TABLE 28-1: MEMORY PROGRAMMING REQUIREMENTS

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C ≤ T

A ≤ +85°C for industrial

Param

No.

Sym Characteristic Min Typ† Max Units Conditions

Program Flash Memory

D130 E

P Cell Endurance 10K — — E/W -40°C to +85°C

D131 VPR VDD for Read VMIN —3.6VVMIN = Minimum operating

voltage

D132B V

PEW VDD for Self-Timed Write VMIN —3.6VVMIN = Minimum operating

voltage

D133A T

IW Self-Timed Write Cycle Time — 2.8 — ms

D134 TRETD Characteristic Retention 20 — — Year Provided no other

specifications are violated

D135 I

DDP Supply Current during

Programming

—314mA

D1xxx T

WE Writes per Erase Cycle — — 1 Per one physical-word

address

† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.