Datasheet

© 2011 Microchip Technology Inc. DS61143H-page 159
PIC32MX3XX/4XX
TABLE 29-12: PROGRAM FLASH MEMORY WAIT STATE CHARACTERISTICS
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY
(3)
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ TA ≤ +105°C for V-Temp
Param.
No.
Symbol Characteristics Min. Typical
(1)
Max. Units Conditions
Program Flash Memory
D130 EP Cell Endurance 1000 — — E/W —
D131 V
PR VDD for Read VMIN —3.6V —
D132 VPEW VDD for Erase or Write 3.0 — 3.6 V —
D134 T
RETD Characteristic Retention 20 — — Year —
D135 I
DDP Supply Current during
Programming
—10—mA —
TWW Word Write Cycle Time 20 — 40 μs—
D136 T
RW Row Write Cycle Time
(2)
(128 words per row)
34.5—ms —
D137 T
PE Page Erase Cycle Time 20 — — ms —
T
CE Chip Erase Cycle Time 80 — — ms —
D138 LVDstartup Flash LVD Delay — — 6 μs—
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus
loads are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The
default Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to the “PIC32MX Flash Programming Specification” (DS61145) for operating conditions during
programming and erase cycles.
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C ≤ T
A ≤ +105°C for V-Temp
Required Flash wait states SYSCLK Units Comments
0 Wait State 0 to 30
MHz
—
1 Wait State 31 to 60
2 Wait States 61 to 80
Note 1: 40 MHz maximum for PIC32MX320F032H and PIC32MX420F032H devices.