Datasheet

© 2009-2011 Microchip Technology Inc. DS61156G-page 191
PIC32MX5XX/6XX/7XX
TABLE 31-11: DC CHARACTERISTICS: PROGRAM MEMORY
(3)
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
-40°C
≤ TA ≤ +105°C for V-Temp
Param.
No.
Symbol Characteristics Min. Typical
(1)
Max. Units Conditions
Program Flash Memory
D130 EP Cell Endurance 1000 — — E/W —
D130a E
P Cell Endurance 20,000 — — E/W See Note 4
D131 VPR VDD for Read 2.3 — 3.6 V —
D132 V
PEW VDD for Erase or Write 3.0 — 3.6 V —
D132a V
PEW VDD for Erase or Write 2.3 — 3.6 V See Note 4
D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications
are violated
D135 I
DDP Supply Current during
Programming
—10 —mA —
T
WW Word Write Cycle Time 20 — 40 μs—
D136 T
RW Row Write Cycle Time
(2)
(128 words per row)
34.5—ms —
D137 T
PE Page Erase Cycle Time 20 — — ms —
T
CE Chip Erase Cycle Time 80 — — ms —
Note 1: Data in “Typical” column is at 3.3V, 25°C unless otherwise stated.
2: The minimum SYSCLK for row programming is 4 MHz. Care should be taken to minimize bus activities
during row programming, such as suspending any memory-to-memory DMA operations. If heavy bus loads
are expected, selecting Bus Matrix Arbitration mode 2 (rotating priority) may be necessary. The default
Arbitration mode is mode 1 (CPU has lowest priority).
3: Refer to “PIC32 Flash Programming Specification” (DS61145) for operating conditions during
programming and erase cycles.
4: This parameter applies to PIC32MX534/564/664/764 devices only. This information is preliminary.