Information

Electrical characteristics STM32F405xx, STM32F407xx
112/185 DocID022152 Rev 4
Unless otherwise specified, the parameters given in Table 49 are derived from tests
performed under the ambient temperature and V
DD
supply voltage conditions summarized
in Table 14 .
Table 49. I/O AC characteristics
(1)(2)(3)
OSPEEDRy
[1:0] bit
value
(1)
Symbol Parameter Conditions Min Typ Max Unit
00
f
max(IO)out
Maximum frequency
(4)
C
L
= 50 pF, V
DD >
2.70 V - - 2
MHz
C
L
= 50 pF, V
DD >
1.8 V - - 2
C
L
= 10 pF, V
DD >
2.70 V - - TBD
C
L
= 10 pF, V
DD >
1.8 V - - TBD
t
f(IO)out
Output high to low level fall
time
C
L
= 50 pF, V
DD
= 1.8 V to
3.6 V
--TBD
ns
t
r(IO)out
Output low to high level rise
time
--TBD
01
f
max(IO)out
Maximum frequency
(4)
C
L
= 50 pF, V
DD >
2.70 V - - 25
MHz
C
L
= 50 pF, V
DD >
1.8 V - - 12.5
(5)
C
L
= 10 pF, V
DD >
2.70 V - - 50
(5)
C
L
= 10 pF, V
DD >
1.8 V - - TBD
t
f(IO)out
Output high to low level fall
time
C
L
= 50 pF, V
DD
< 2.7 V - - TBD
ns
C
L
= 10 pF, V
DD
> 2.7 V - - TBD
t
r(IO)out
Output low to high level rise
time
C
L
= 50 pF, V
DD
< 2.7 V - - TBD
C
L
= 10 pF, V
DD
> 2.7 V - - TBD
10
f
max(IO)out
Maximum frequency
(4)
C
L
= 40 pF, V
DD >
2.70 V - - 50
(5)
MHz
C
L
= 40 pF, V
DD >
1.8 V - - 25
C
L
= 10 pF, V
DD >
2.70 V - - 100
(5)
C
L
= 10 pF, V
DD >
1.8 V - - TBD
t
f(IO)out
Output high to low level fall
time
C
L
= 50 pF,
2.4 < V
DD
< 2.7 V
--TBD
nsC
L
= 10 pF, V
DD
> 2.7 V - - TBD
t
r(IO)out
Output low to high level rise
time
C
L
= 50 pF,
2.4 < V
DD
< 2.7 V
--TBD
C
L
= 10 pF, V
DD
> 2.7 V - - TBD