Information

Electrical characteristics STM32F405xx, STM32F407xx
104/185 DocID022152 Rev 4
Figure 36. PLL output clock waveforms in down spread mode
5.3.12 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Time
ai17292
Frequency (PLL_OUT)
F0
2 x md
tmode
2 x tmode
Table 38. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
DD
Supply current
Write / Erase 8-bit mode, V
DD
= 1.8 V - 5 -
mAWrite / Erase 16-bit mode, V
DD
= 2.1 V - 8 -
Write / Erase 32-bit mode, V
DD
= 3.3 V - 12 -
Table 39. Flash memory programming
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit
t
prog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16100
(2)
µs
t
ERASE16KB
Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
- 400 800
ms
Program/erase parallelism
(PSIZE) = x 16
- 300 600
Program/erase parallelism
(PSIZE) = x 32
- 250 500