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STM32F20xxx Electrical characteristics
177
Table 37. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
DD
Supply current
Write / Erase 8-bit mode
V
DD
= 1.8 V
-5-
mA
Write / Erase 16-bit mode
V
DD
= 2.1 V
-8-
Write / Erase 32-bit mode
V
DD
= 3.3 V
-12-
Table 38. Flash memory programming
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
1. Based on characterization, not tested in production.
Unit
t
prog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16100
(2)
2. The maximum programming time is measured after 100K erase operations.
µs
t
ERASE16KB
Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
- 400 800
ms
Program/erase parallelism
(PSIZE) = x 16
- 300 600
Program/erase parallelism
(PSIZE) = x 32
- 250 500
t
ERASE64KB
Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
- 1200 2400
ms
Program/erase parallelism
(PSIZE) = x 16
- 700 1400
Program/erase parallelism
(PSIZE) = x 32
- 550 1100
t
ERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-24
s
Program/erase parallelism
(PSIZE) = x 16
-1.32.6
Program/erase parallelism
(PSIZE) = x 32
-12
t
ME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-1632
s
Program/erase parallelism
(PSIZE) = x 16
-1122
Program/erase parallelism
(PSIZE) = x 32
-816
V
prog
Programming voltage
32-bit program operation 2.7 - 3.6 V
16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.8 - 3.6 V