Information

Electrical characteristics STM32F20xxx
132/178 DocID15818 Rev 11
Figure 58. Asynchronous multiplexed PSRAM/NOR read waveforms
1. C
L
= 30 pF.
2. Based on characterization, not tested in production.
Table 74. Asynchronous multiplexed PSRAM/NOR read timings
(1)(2)
Symbol Parameter Min Max Unit
t
w(NE)
FSMC_NE low time 3T
HCLK
-1 3T
HCLK
+1 ns
t
v(NOE_NE)
FSMC_NEx low to FSMC_NOE low 2T
HCLK
2T
HCLK
+0.5 ns
t
w(NOE)
FSMC_NOE low time T
HCLK
-1 T
HCLK
+1 ns
t
h(NE_NOE)
FSMC_NOE high to FSMC_NE high hold time 0 - ns
t
v(A_NE)
FSMC_NEx low to FSMC_A valid - 2 ns
t
v(NADV_NE)
FSMC_NEx low to FSMC_NADV low 1 2.5 ns
t
w(NADV)
FSMC_NADV low time T
HCLK
– 1.5 T
HCLK
ns
t
h(AD_NADV)
FSMC_AD(adress) valid hold time after
FSMC_NADV high)
T
HCLK
-ns
t
h(A_NOE)
Address hold time after FSMC_NOE high T
HCLK
-ns
t
h(BL_NOE)
FSMC_BL time after FSMC_NOE high 0 - ns
t
v(BL_NE)
FSMC_NEx low to FSMC_BL valid - 1 ns
t
su(Data_NE)
Data to FSMC_NEx high setup time T
HCLK
+ 2 - ns
NBL
Data
FSMC_NBL[1:0]
FSMC_
AD[15:0]
t
v(BL_NE)
t
h(Data_NE)
Address
FSMC_A[25:16]
t
v(A_NE)
FSMC_NWE
t
v(A_NE)
ai14892b
Address
FSMC_NADV
t
v(NADV_NE)
t
w(NADV)
t
su(Data_NE)
t
h(AD_NADV)
FSMC_NE
FSMC_NOE
t
w(NE)
t
w(NOE)
t
v(NOE_NE)
t
h(NE_NOE)
t
h(A_NOE)
t
h(BL_NOE)
t
su(Data_NOE)
t
h(Data_NOE)