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STM32F105xx, STM32F107xx Electrical characteristics
103
5.3.9 Memory characteristics
Flash memory
The characteristics are given at T
A
= –40 to 105 °C unless otherwise specified.
Table 30. Flash memory endurance and data retention
5.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Table 29. Flash memory characteristics
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
t
prog
16-bit programming time T
A
= –40 to +105 °C 40 52.5 70 µs
t
ERASE
Page (1 KB) erase time T
A
= –40 to +105 °C 20 - 40 ms
t
ME
Mass erase time T
A
= –40 to +105 °C 20 - 40 ms
I
DD
Supply current
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
- - 20 mA
Write / Erase modes
f
HCLK
= 72 MHz, V
DD
= 3.3 V
- - 5 mA
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
- - 50 µA
V
prog
Programming voltage - 2 - 3.6 V
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization, not tested in production.
Typ Max
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
- - kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30 - -
Years1 kcycle
(2)
at T
A
= 105 °C 10 - -
10 kcycles
(2)
at T
A
= 55 °C 20 - -