User manual

page 81
Analog System Lab Kit PRO
• PNP General Purpose Transistor
•
Collector-Emiter Breakdown Voltage:
V
(BR)CEO=40V
•
Collector-Base Breakdown Voltage:
V
(BR)CBO=40V
•
hFE: 100 @ IC=10mADC,VCE=1VDC
•
TransitionFrequency:f=100MHz@VCE=20VDC,
I
C=10mADC
http://61.222.192.61/mccsemi/
up_pdf/2N3906(TO-92).pdf
http://61.222.192.61/mccsemi/
up_pdf/2N3904(TO-92).pdf
http://www.diodes.com/datasheets/BS250P.pdf
A.6.1 2N3906 Features A.6.3 2N3904 Features A.6.5 BS250 Features
A.6.2 Download Datasheet A.6.4 Download Datasheet A.6.6 Download Datasheet
Transistors
Figure A.6: 2N3906
PNP General Purpose Amplier
Figure A.7: 2N3906
NPN General Purpose Amplier
Figure A.8: BS250
P-Channel Enhancement
Mode Vertical DMOS FET
B CE G SDB CE
• NPN General Purpose Transistor
•
Collector-Emiter Breakdown Voltage:
V
(BR)CEO=40V
•
Collector-Base Breakdown Voltage:
V
(BR)CBO=60V
•
hFE: 100 @ IC=10mADC,VCE=1VDC
•
TransitionFrequency:f=100MHz@VCE=20VDC,
I
C=10mADC
•
P-CHANNEL ENHANCEMENT MODE VERTICAL
DMOS FET
•
Drain-Source Voltage: VDS=-45V
•
Continuous Drain Current ID=-230mA
@ T
AMB=25°C
•
Gate-Source Voltage: VGS=±20V
•
Static Drain-Source on-State Resistance:
R
DS(ON)=14Ω@VGS=-10V,ID=-200mA
•
Gate-Source Threshold Voltage:
V
GS(TH) Min -1V; Max: -3.5V @ ID=-1mA,VDS=VGS
2N3906, 2N3904, BS250