Product data

MFRC631 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.3 — 4 February 2014
227433 100 of 120
NXP Semiconductors
MFRC631
High performance ISO/IEC 14443 A/B reader solution
10. Limiting values
11. Recommended operating conditions
[1] V
DD(PVDD)
must always be the same or lower than V
DD
.
12. Thermal characteristics
13. Characteristics
Table 191. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 0.5 +5.5 V
V
DD(PVDD)
PVDD supply voltage 0.5 +5.5 V
V
DD(TVDD)
TVDD supply voltage 0.5 +5.5 V
V
i(RXP)
input voltage on pin RXP -0.5 +2.0 V
V
i(RXN)
input voltage on pin RXN 0.5 +2.0 V
P
tot
total power dissipation per package - 1125 mW
V
ESD(HBM)
electrostatic discharge voltage Human Body Model (HBM);
1500 , 100 pF;
JESD22-A114-B
- 2000 V
V
ESD(
CDM
)
electrostatic discharge voltage Charge Device Model (CDM); - 500 V
T
j(max)
maximum junction
temperature
- 150 °C
Table 192. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
DD
supply voltage 3 5 5.5 V
V
DD(TVDD)
TVDD supply voltage
[1]
355.5V
V
DD(PVDD)
PVDD supply voltage 3 5 5.5 V
T
amb
ambient temperature 25 - +85 C
Table 193. Thermal characteristics
Symbol Parameter Conditions Package Typ Unit
R
th(j-a)
thermal resistance from junction to
ambient
in still air with exposed pin soldered on a
4 layer JEDEC PCB
HVQFN32 40 K/W
Table 194. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Input characteristics I/O Pin Characteristics IF3-SDA in I
2
C configuration
I
LI
input leakage current output disabled - 2 100 nA
V
IL
LOW-level input voltage 0.5 - +0.3V
DD(PVDD)
V
V
IH
HIGH-level input voltage 0.7V
DD(PVDD)
-V
DD(PVDD)
+ 0.5 V
V
OL
LOW-level output voltage I
OL
= 3 mA - - 0.3 V