Datasheet

MT8870D/MT8870D-1 Data Sheet
10
Zarlink Semiconductor Inc.
† Exceeding these values may cause permanent damage. Functional operation under these conditions is not implied.
Derate above 75°C at 16 mW / °C. All leads soldered to board.
‡ Typical figures are at 25°C and are for design aid only: not guaranteed and not subject to production testing.
Absolute Maximum Ratings
†
Parameter Symbol Min. Max. Units
1 DC Power Supply Voltage V
DD
7V
2 Voltage on any pin V
I
V
SS
-0.3 V
DD
+0.3 V
3 Current at any pin (other than supply) I
I
10 mA
4 Storage temperature T
STG
-65 +150 °C
5 Package power dissipation P
D
500 mW
Recommended Operating Conditions -
Voltages are with respect to ground (V
SS
) unless otherwise stated.
Parameter Sym. Min. Typ.
‡
Max. Units Test Conditions
1 DC Power Supply Voltage V
DD
4.75 5.0 5.25 V
2 Operating Temperature T
O
-40 +85 °C
3 Crystal/Clock Frequency fc
3.579545
MHz
4 Crystal/Clock Freq.Tolerance ∆fc ±0.1 %
DC Electrical Characteristics -
V
DD
=5.0V± 5%, V
SS
=0V, -40°C ≤ T
O
≤ +85°C, unless otherwise stated.
Characteristics Sym. Min. Typ.
‡
Max. Units Test Conditions
1
S
U
P
P
L
Y
Standby supply current I
DDQ
10 25 µA PWDN=V
DD
2 Operating supply current I
DD
3.0 9.0 mA
3 Power consumption P
O
15 mW fc=3.579545 MHz
4
I
N
P
U
T
S
High level input V
IH
3.5 V V
DD
=5.0 V
5 Low level input voltage V
IL
1.5 V V
DD
=5.0 V
6 Input leakage current I
IH
/I
IL
0.1 µAV
IN
=V
SS
or V
DD
7 Pull up (source) current I
SO
7.5 20 µA TOE (pin 10)=0,
V
DD
=5.0 V
8 Pull down (sink) current I
SI
15 45 µAINH=5.0V,
PWDN=5.0 V,
V
DD
=5.0 V
9 Input impedance (IN+, IN-) R
IN
10 MΩ @ 1 kHz
10 Steering threshold voltage V
TSt
2.2 2.4 2.5 V V
DD
= 5.0 V