Datasheet
TC7660
DS21465C-page 2 2002-2011 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage .............................................................+10.5V
LV and OSC Inputs Voltage: (Note 1)
.............................................. -0.3V to V
SS
for V
+
< 5.5V
.....................................(V
+
– 5.5V) to (V
+
) for V
+
> 5.5V
Current into LV .........................................20 µA for V
+
> 3.5V
Output Short Duration (V
SUPPLY
5.5V)...............Continuous
Package Power Dissipation: (T
A
70°C)
8-Pin CERDIP ....................................................800 mW
8-Pin PDIP .........................................................730 mW
8-Pin SOIC.........................................................470 mW
Operating Temperature Range:
C Suffix.......................................................0°C to +70°C
I Suffix .....................................................-25°C to +85°C
E Suffix....................................................-40°C to +85°C
M Suffix .................................................-55°C to +125°C
Storage Temperature Range .........................-65°C to +160°C
ESD protection on all pins (HBM) ................................. 3kV
Maximum Junction Temperature ........... ....................... 150°C
* Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
FIGURE 1-1: TC7660 Test Circuit.
ELECTRICAL SPECIFICATIONS
1
2
3
4
8
7
6
5
TC7660
+
V
+
(+5V)
V
OUT
C
1
10 µF
C
OSC
+
C
2
10 µF
I
L
R
L
I
S
Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V
+
= 5V,
C
OSC
= 0, refer to test circuit in Figure 1-1.
Parameters Sym Min Typ Max Units Conditions
Supply Current
I
+
— 80 180 µA R
L
=
Supply Voltage Range, High V
+
H
3.0 — 10 V Min T
A
Max, R
L
= 10 k, LV Open
Supply Voltage Range, Low V
+
L
1.5 — 3.5 V Min T
A
Max, R
L
= 10 k, LV to GND
Output Source Resistance
R
OUT
— 70 100 I
OUT
=20 mA, T
A
= +25°C
— — 120 I
OUT
=20 mA, T
A
+70°C (C Device)
— — 130 I
OUT
=20 mA, T
A
+85°C (E and I Device)
— 104 150 I
OUT
=20 mA, T
A
+125°C (M Device)
— 150 300 V
+
= 2V, I
OUT
= 3 mA, LV to GND
0°C T
A
+70°C
— 160 600 V
+
= 2V, I
OUT
= 3 mA, LV to GND
-55°C T
A
+125°C (M Device)
Oscillator Frequency
f
OSC
— 10 — kHz Pin 7 open
Power Efficiency
P
EFF
95 98 — % R
L
= 5 k
Voltage Conversion Efficiency
V
OUTEFF
97 99.9 — % R
L
=
Oscillator Impedance
Z
OSC
—1.0—M V
+
= 2V
— 100 — k V
+
= 5V
Note 1: Destructive latch-up may occur if voltages greater than V
+
or less than GND are supplied to any input pin.