Datasheet
Table Of Contents
- 12A High-Speed MOSFET Drivers
- Features
- Applications
- General Description
- Package Types
- Functional Block Diagram
- 1.0 Electrical Characteristics
- 2.0 Typical Performance Curves
- FIGURE 2-1: Rise Time vs. Supply Voltage
- FIGURE 2-2: Rise Time vs. Capacitive Load
- FIGURE 2-3: Fall Time vs. Supply Voltage
- FIGURE 2-4: Fall Time vs. Capacitive Load
- FIGURE 2-5: Rise and Fall Times vs. Temperature
- FIGURE 2-6: Crossover Energy vs. Supply Voltage
- FIGURE 2-7: Propagation Delay vs. Supply Voltage
- FIGURE 2-8: Propagation Delay vs. Input Amplitude
- FIGURE 2-9: Propagation Delay vs. Temperature
- FIGURE 2-10: Quiescent Supply Current vs. Supply Voltage
- FIGURE 2-11: Quiescent Supply Current vs. Temperature
- FIGURE 2-12: Input Threshold vs. Temperature
- FIGURE 2-13: Input Threshold vs. Supply Voltage
- FIGURE 2-14: High State Output Resistance vs. Supply Voltage
- FIGURE 2-15: Low State Output Resistance vs. Supply Voltage
- FIGURE 2-16: Supply Current vs. Capacitive Load (VDD = 18V)
- FIGURE 2-17: Supply Current vs. Capacitive Load (VDD = 12V)
- FIGURE 2-18: Supply Current vs. Capacitive Load (VDD = 6V)
- FIGURE 2-19: Supply Current vs. Frequency (VDD = 18V)
- FIGURE 2-20: Supply Current vs. Frequency (VDD = 12V)
- FIGURE 2-21: Supply Current vs. Frequency (VDD = 6V)
- 3.0 Pin Descriptions
- 4.0 Applications Information
- 5.0 Packaging Information
- Appendix A: Revision History
- Product Identification System
- Trademarks
- Worldwide Sales and Service

2006-2014 Microchip Technology Inc. DS20001987C-page 5
TC4451/TC4452
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V V
DD
18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 — — V
Logic ‘0’, Low Input Voltage V
IL
——0.8V
Input Current I
IN
-10 — +10 µA 0V V
IN
V
DD
Output
High Output Voltage V
OH
V
DD
–0.025 — — V DC Test
Low Output Voltage V
OL
——0.025VDC Test
Output Resistance, High R
OH
——2.2 I
OUT
=10mA, V
DD
=18V
Output Resistance, Low R
OL
——2.0 I
OUT
=10mA, V
DD
=18V
Switching Time (Note 1)
Rise Time t
R
—3560nsFigure 4-1, C
L
=15,000pF
Fall Time t
F
—3860nsFigure 4-1, C
L
=15,000pF
Propagation Delay Time t
D1
—5565nsFigure 4-1, C
L
=15,000pF
Propagation Delay Time t
D2
—5565nsFigure 4-1, C
L
=15,000pF
Power Supply
Power Supply Current I
S
— 200 400 µA V
IN
=3V
—50150µAV
IN
=0V
Operating Input Voltage V
DD
4.5 — 18.0 V
V
DD
Ramp Rate SV
DD
0.2 — — V/ms
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V V
DD
18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range (V) T
A
-40 — +125 °C
Maximum Junction Temperature T
J
— — +150 °C
Storage Temperature Range T
A
-65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
JA
— 39.5 — °C/W Without heat sink
Thermal Resistance, 8L-6x5 DFN-S
JA
— 35.7 — °C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
JA
—89.3—°C/W
Thermal Resistance, 8L-SOIC
JA
— 149.5 — °C/W