Datasheet

©2002-2016 DS20005022C 04/16
Data Sheet
www.microchip.com
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 10 mA (typical)
– Standby Current: 30 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 55 ns
– 70 ns
• Latched Address and Data
• Automatic Write Timing
– Internal V
PP
Generation
• Fast Erase and Byte-Program
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39SF010A
4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
• All devices are RoHS compliant
The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose
Flash (MPF) devices manufactured with SST proprietary, high performance
CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-
ing injector attain better reliability and manufacturability compared with alternate
approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program
or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts
for x8 memories