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- 1.0 Device Overview
- 2.0 Application Information
- 3.0 Electrical Characteristics
- 4.0 Radio Characteristics
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2016-2019 Microchip Technology Inc. DS50002519D-Page 15
RN4678
3.0 ELECTRICAL CHARACTERISTICS
This section provides an overview of the electrical characteristics of the RN4678 module. Additional information is
provided in future revisions of this document as it becomes available.
Absolute maximum ratings for the RN4678 devices are listed below. Exposure to these maximum rating conditions for
extended periods may affect device reliability. Functional operation of the device at these or any other conditions, above
the parameters indicated in the operation listings of this specification, is not implied.
Absolute Maximum Ratings
Ambient temperature under bias...............................................................................................................-20°C to +70°C
Storage temperature .............................................................................................................................. -40°C to +125°C
Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +3.6V
Maximum output current sunk by any I/O pin..........................................................................................................12 mA
Maximum output current sourced by any I/O pin.....................................................................................................12 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions,
above those indicated in the operation listings of this specification, is not implied. Exposure to maximum
rating conditions for extended periods may affect device reliability.