Datasheet

 2015 Microchip Technology Inc. Preliminary DS60001320B-page 661
PIC32MZ Embedded Connectivity with Floating Point Unit (EF) Family
TABLE 37-47: EBI TIMING REQUIREMENTS
TABLE 37-48: EBI THROUGHPUT REQUIREMENTS
AC CHARACTERISTICS
Standard Operating Conditions: 2.1V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial 
-40°C  TA  +125°C for Extended
Param.
No.
Symbol Characteristic Min. Typ. Max. Units Conditions
EB10 TEBICLK Internal EBI Clock Period 
(PBCLK8)
10 — — ns —
EB11 TEBIRC EBI Read Cycle Time 
(TRC<5:0>)
20 — — ns —
EB12 TEBIPRC EBI Page Read Cycle Time
(TPRC<3:0>)
20 — — ns —
EB13 TEBIAS EBI Write Address Setup (TAS<1:0>) 10 — — ns —
EB14 TEBIWP EBI Write Pulse Width 
(TWP<5:0>)
10 — — ns —
EB15 TEBIWR EBI Write Recovery Time
(TWR<1:0>)
10 — — ns —
EB16 TEBICO EBI Output Control Signal Delay — — 5 ns See Note 1
EB17 TEBIDO EBI Output Data Signal Delay — — 5 ns See Note 1
EB18 TEBIDS EBI Input Data Setup 5 — — ns See Note 1
EB19 TEBIDH EBI Input Data Hold 3 — — ns See Note 1, 2
Note 1: Maximum pin capacitance = 10 pF.
2: Hold time from EBI Address change is 0 ns.
AC CHARACTERISTICS
Standard Operating Conditions: 2.1V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +85°C for Industrial 
-40°C  TA  +125°C for Extended
Param.
No.
Characteristic Min. Typ. Max. Units Conditions
EB20 Asynchronous SRAM Read — 100 — Mbps —
EB21 Asynchronous SRAM Write — 533 — Mbps —
Note 1: Maximum pin capacitance = 10 pF.
2: Hold time from EBI Address change is 0 ns.