Datasheet

 2010 Microchip Technology Inc. Preliminary DS39960B-page 497
PIC18F87K22 FAMILY
TABLE 31-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D110
V
PP Voltage on MCLR/VPP/RE5 pin VDD + 1.5 — 10 V (Note 3, Note 4)
D113 I
DDP Supply Current during
Programming
——10mA
Data EEPROM Memory (Note 2)
D120 E
D Byte Endurance 100K 1000K — E/W -40C to +85C
D121 V
DRW VDD for Read/Write 1.8 — 3.6 V Using EECON to read/write
D122 T
DEW Erase/Write Cycle Time — 4 — ms
D123 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D124 T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
1M 10M — E/W -40°C to +85°C
Program Flash Memory
D130 EP Cell Endurance 10K — — E/W -40C to +85C
D131 V
PR VDD for Read 1.8 — 5.5 V ENVREG tied to VDD
1.8 — 3.3 V ENVREG tied to VSS
D132B VPEW Voltage for Self-Timed Erase or
Write Operations
V
DD 1.8 — 5.5 V ENVREG tied to VDD
D133A TIW Self-Timed Write Cycle Time — 2 — ms
D134 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D135 I
DDP Supply Current during
Programming
——10mA
D140 T
WE Writes per Erase Cycle — — 1 For each physical address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: Refer to Section 9.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if Single-Supply Programming is disabled.
4: The MPLAB ICD2 does not support variable V
PP output. Circuitry to limit the ICD2 VPP voltage must be
placed between the ICD2 and target system when programming or debugging with the ICD2.