Datasheet

PIC18(L)F2X/4XK22
DS41412C-page 438 Preliminary  2010 Microchip Technology Inc.
27.9 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Internal Program Memory
Programming Specifications
(1)
D170
V
PP Voltage on MCLR/VPP/RE3 pin 8 — 9 V (Note 3), (Note 4)
D171 I
DDP Supply Current during
Programming
——10mA
Data EEPROM Memory
D172 E
D Byte Endurance 100K — — E/W -40C to +85C
D173 V
DRW VDD for Read/Write (PIC18LF) 1.8 — 3.6 V Using EECON to
read/write
D174 V
DRW VDD for Read/Write (PIC18F) 1.8 — 5.5 V
D175 T
DEW Erase/Write Cycle Time — 4 — ms
D176 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
D177 T
REF Number of Total Erase/Write
Cycles before Refresh
(2)
1M 10M — E/W -40°C to +85°C
Program Flash Memory
D178 E
P Cell Endurance 10K — — E/W -40C to +85C (Note 5)
D179 V
PR VDD for Read (PIC18LF) 1.8 — 3.6 V
D180 V
PR VDD for Read (PIC18F) 1.8 — 5.5 V
D181 V
IW VDD for Row Erase or Write
(PIC18LF)
2.2 — 3.6 V
D182 V
IW VDD for Row Erase or Write
(PIC18F)
2.2 — 5.5 V
D183 T
IW Self-timed Write Cycle Time — 2 — ms
D184 T
RETD Characteristic Retention 40 — — Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write instruc-
tions.
2: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3: Required only if single-supply programming is disabled.
4: The MPLAB ICD 2 does not support variable V
PP output. Circuitry to limit the ICD 2 VPP voltage must be
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
5: Self-write and Block Erase.