Datasheet

 2006-2015 Microchip Technology Inc. DS40001291H-page 269
PIC16F882/883/884/886/887
TABLE 17-22: DATA EEPROM MEMORY ENDURANCE SPECIFICATIONS FOR PIC16F886/7-H
(High Temp.)
TABLE 17-23: OSCILLATOR PARAMETERS FOR PIC16F886/7-H
(High Temp.)
TABLE 17-24: WATCHDOG TIMER SPECIFICATIONS FOR PIC16F886/7-H
(High Temp.)
TABLE 17-25: COMPARATOR SPECIFICATIONS FOR PIC16F886/7-H
(High Temp.)
TABLE 17-26: ADC SPECIFICATIONS FOR PIC16F886/7-H
(High Temp.)
Param
No.
Sym. Characteristic Min. Typ. Max. Units Conditions
D120A ED Byte Endurance 5K 50K — E/W 126°C TA 150°C
Param
No.
Sym. Characteristic
Frequency
Tolerance
Min. Typ. Max. Units Conditions
OS08 INT
OSC Int. Calibrated INTOSC
Freq.
(1)
±7.5% 7.4 8.0 8.6 MHz 2.1V VDD 5.5V
-40°C T
A 150°C
Note 1: To ensure these oscillator frequency tolerances, VDD and VSS must be capacitively decoupled as close to
the device as possible. 0.1 µF and 0.01 µF values in parallel are recommended.
Param
No.
Sym. Characteristic Min. Typ. Max. Units Conditions
31 T
WDT Watchdog Timer Time-out Period
(No Prescaler)
10 20 70 ms 150°C Temperature
Param
No.
Sym. Characteristic Min. Typ. Max. Units Conditions
CM01 V
OS Input Offset Voltage — ±5 ±20 mV (VDD - 1.5)/2
Param
No.
Sym. Characteristic Min. Typ. Max. Units Conditions
AD02 E
IL Integral Error — — ±1.5 LSb VDD = 5.12V
AD07 EGN Gain Error — — ±1.5 LSb VDD = 5.12V