Datasheet

PIC16F882/883/884/886/887
DS40001291H-page 268  2006-2015 Microchip Technology Inc.
TABLE 17-19: DC CHARACTERISTICS FOR IDD SPECIFICATIONS FOR PIC16F886/7-H (High
Temp.)
TABLE 17-20: DC CHARACTERISTICS FOR IPD SPECIFICATIONS FOR PIC16F886/7-H (High
Temp.)
TABLE 17-21: LEAKAGE CURRENT SPECIFICATIONS FOR PIC16F886/7-H (High Temp.)
Param
No.
Device
Characteristics
Min. Typ. Max. Units
Condition
V
DD Note
D001 V
DD 2.1 — 5.5 V — FOSC  8 MHz: HFINTOSC, EC
2.1 — 5.5 V — FOSC  4 MHz
Param
No.
Device
Characteristics
Units Min. Typ. Max.
Condition
V
DD Note
D020E Power Down Base
Current (IPD)
—— 27
A
2.1
IPD Base: WDT, BOR,
Comparators, V
REF and
T1
OSC disabled
—— 29 3.0
—— 32 5.0
D021E — — 55
A
2.1
WDT Current—— 59 3.0
—— 69 5.0
D022E — — 75
A
3.0
BOR Current
—— 147 5.0
D023E — — 73
A
2.1
Comparator current, both
comparators enabled
—— 117 3.0
—— 235 5.0
D024E — — 102
A
2.1
CV
REF current, high range—— 128 3.0
—— 170 5.0
D024AE — — 133
A
2.1
CV
REF current, low range—— 167 3.0
—— 222 5.0
D025E — — 36
A
2.1
T1
OSC current, 32 kHz—— 41 3.0
—— 47 5.0
D026E — — 22
A
3.0
Analog-to-Digital current,
no conversion in progress
—— 24 5.0
D027E — — 189
A
3.0
VP6 current (Fixed Voltage
Reference)
—— 250 5.0
Param
No.
Sym. Characteristic Min. Typ. Max. Units Conditions
D061 I
IL Input Leakage Current
(1)
(RA3/MCLR)
— ±0.5 ±5.0 µA V
SS VPIN VDD
D062 IIL Input Leakage Current
(2)
(RA3/MCLR)
50 250 400 µA V
DD = 5.0V
Note 1: This specification applies when RA3/MCLR
is configured as an input with the pull-up disabled. The
leakage current for the RA3/MCLR
pin is higher than for the standard I/O port pins.
2: This specification applies when RA3/MCLR
is configured as the MCLR reset pin function with the weak
pull-up enabled.