Datasheet

 2005-2015 Microchip Technology Inc. DS40001262F-page 255
PIC16F631/677/685/687/689/690
TABLE 17-19: DC CHARACTERISTICS FOR IDD SPECIFICATIONS FOR PIC16F685/687/689/690-H
(High Temp.)
Param
No.
Device
Characteristics
Min. Typ. Max. Units
Condition
V
DD Note
D001 V
DD 2.1 — 5.5 V — FOSC  8 MHz: HFINTOSC, EC
2.1 — 5.5 V — FOSC  4 MHz
D010 Supply Current (I
DD)— — 47
A
2.1
Fosc = 32 kHz
LP Oscillator
— — 69 3.0
——108 5.0
D011 — — 357
A
2.1
Fosc = 1 MHz
XT Oscillator
——533 3.0
——729 5.0
D012 — — 535
A
2.1
Fosc = 4 MHz
XT Oscillator
——875 3.0
— — 1.32 mA 5.0
D013 — — 336
A
2.1
Fosc = 1 MHz
EC Oscillator
——477 3.0
——777 5.0
D014 — — 505
A
2.1
Fosc = 4 MHz
EC Oscillator
——724 3.0
— — 1.30 mA 5.0
D015 — — 51
A
2.1
Fosc = 31 kHz
LFINTOSC
— — 92 3.0
——117mA 5.0
D016 — — 665
A
2.1
Fosc = 4 MHz
HFINTOSC
——970 3.0
— — 1.56 mA 5.0
D017 — — 936 A2.1
Fosc = 8 MHz
HFINTOSC
——1.34
mA
3.0
— — 2.27 5.0
D018 — — 605
A
2.1
Fosc = 4 MHz
EXTRC
——903 3.0
— — 1.43 mA 5.0
D019 — — 6.61
mA
4.5
Fosc = 20 MHz
HS Oscillator
— — 7.81 5.0