Datasheet

PIC16(L)F1824/8
DS40001419F-page 372 2010-2015 Microchip Technology Inc.
TABLE 30-21: DC CHARACTERISTICS FOR IPD SPECIFICATIONS FOR PIC16F1824/8-H (High
Temp.)
PIC16F1824/8
Standard Operating Conditions: (unless otherwise stated)
Operating Temperature: -40°C T
A +150°C for High Temperature
Param
No.
Device Characteristics Min. Typ. Max. Units
Condition
V
DD Note
Power-Down Base Current (I
PD)
(2)
D022 60 A 3.0 WDT, BOR, FVR, and T1OSC
disabled, all Peripherals Inactive
——75A5.0
D023 60 A 3.0 LPWDT Current (Note 1)
——75A5.0
D023A 75 A 3.0 FVR current (Note 1)
120 A5.0
D024 55 A 3.0 BOR Current (Note 1)
——75A5.0
D025 65 A 3.0 T1OSC Current (Note 1)
——80A5.0
D026 55 A 3.0 A/D Current (Note 1, Note 3),
no conversion in progress
——70A5.0
D027 ————
Cap Sense module is not
intended for use in high
temperature devices
D028 70 A 3.0 Comparator Current, Low-
Power mode (Note 1)
——90A5.0
D028B 100 A 3.0 Comparator Current, High-
Power mode (Note 1)
——115A5.0
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral current can be determined by subtracting the base I
DD or IPD cur-
rent from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins set to inputs state and tied to V
DD.
3: A/D oscillator source is F
RC.