Datasheet

 2011-2015 Microchip Technology Inc. DS40001615C-page 13
PIC12(L)F1501
3.0 MEMORY ORGANIZATION
These devices contain the following types of memory:
• Program Memory
- Configuration Words
- Device ID
-User ID
- Flash Program Memory
• Data Memory
- Core Registers
- Special Function Registers
- General Purpose RAM
- Common RAM
The following features are associated with access and
control of program memory and data memory:
• PCL and PCLATH
•Stack
• Indirect Addressing
3.1 Program Memory Organization
The enhanced mid-range core has a 15-bit program
counter capable of addressing a 32K x 14 program
memory space. Table 3-1 shows the memory sizes
implemented. Accessing a location above these
boundaries will cause a wrap-around within the
implemented memory space. The Reset vector is at
0000h and the interrupt vector is at 0004h (See
Figure 3-1).
3.2 High-Endurance Flash
This device has a 128 byte section of high-endurance
program Flash memory (PFM) in lieu of data EEPROM.
This area is especially well suited for nonvolatile data
storage that is expected to be updated frequently over
the life of the end product. See Section 10.2 “Flash
Program Memory Overview” for more information on
writing data to PFM. See Section 3.2.1.2 “Indirect
Read with FSR” for more information about using the
FSR registers to read byte data stored in PFM.
TABLE 3-1: DEVICE SIZES AND ADDRESSES
Device
Program Memory
Space (Words)
Last Program Memory
Address
High-Endurance Flash
Memory Address Range
(1)
PIC12LF1501
PIC12F1501
1,024 03FFh 0380h-03FFh
Note 1: High-endurance Flash applies to low byte of each address in the range.