Datasheet

 2017 Microchip Technology Inc. DS20005720A-page 7
MIC5209
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Storage Temperature Range T
S
–65 — +150 °C —
Lead Temperature — — — +260 °C Soldering, 5 sec.
Junction Temperature T
J
–40 — +125 °C 2.5V ≤ V
OUT
≤ 15V
Junction Temperature T
J
0 — +125 °C 1.8V ≤ V
OUT
< 2.5V
Package Thermal Resistance
Thermal Resistance SOT-223
θ
JA
— 62 — °C/W EIA/JEDEC
JES51-751-7,
4 Layer Board
θ
JC
—15 —°C/W
Thermal Resistance SOIC-8
θ
JA
— 50 — °C/W See Thermal
Considerations for more
information.
θ
JC
—25 —°C/W
Thermal Resistance DDPAK
θ
JA
— 31.4 — °C/W EIA/JEDEC
JES51-751-7,
4 Layer Board
θ
JC
—3 —°C/W
Thermal Resistance 3 mm x 3 mm
DFN
θ
JA
— 64 — °C/W EIA/JEDEC
JES51-751-7,
4 Layer Board
θ
JC
—12 —°C/W
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
, 
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.