Datasheet

MIC4416/7
DS20006077A-page 4  2018 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Typical values at T
A
= +25°C. Minimum and maximum values indicate performance at
–40°C ≤ T
A
≤ +85°C. Parts production tested at +25°C. Devices are ESD protected, however handling precautions
are recommended. Note 1
Parameter Sym. Min. Typ. Max. Units Conditions
Supply Current I
S
— 50 200
µA
4.5V ≤ V
S
≤ 18V, V
CTL
= 0V
— 370 1500 4.5V ≤ V
S
≤ 18V, V
CTL
= 5V
Control Input Voltage V
CTL
——0.8
V
4.5V ≤ V
S
≤ 18V, V
CTL
for logic 0 input
2.4 — — 4.5V ≤ V
S
≤ 18V, V
CTL
for logic 1 input
Control Input Current I
CTL
–10 — 10 µA 0V ≤ V
CTL
≤ V
S
Delay Time, V
CTL
Rising t
D
—42—
ns
V
S
= 5V, C
L
= 1000 pF, Note 2
—3360 V
S
= 18V, C
L
= 1000 pF, Note 2
Delay Time, V
CTL
Falling t
D
—42—
ns
V
S
= 5V, C
L
= 1000 pF, Note 2
—2340 V
S
= 18V, C
L
= 1000 pF, Note 2
Output Rise Time t
r
—24—
ns
V
S
= 5V, C
L
= 1000 pF, Note 2
—1440 V
S
= 18V, C
L
= 1000 pF, Note 2
Output Fall Time t
f
—28—
ns
V
S
= 5V, C
L
= 1000 pF, Note 2
—1640 V
S
= 18V, C
L
= 1000 pF, Note 2
Gate Output Offset
Voltage
— –25 —
mV
4.5V ≤ V
S
≤ 18V, V
G
= high
— 25 — 4.5V ≤ V
S
≤ 18V, V
G
= low
Output Resistance R
O
—7.6—
Ω
V
S
= 5V, I
OUT
= 10 mA, P-channel
(source) MOSFET
—7.8—
V
S
= 5V, I
OUT
= 10 mA, N-channel (sink)
MOSFET
—3.510
Ω
V
S
= 18V, I
OUT
= 10 mA, P-channel
(source) MOSFET
—3.510
V
S
= 18V, I
OUT
= 10 mA, N-channel
(sink) MOSFET
Gate Output Reverse
Current
250 — — mA No latch up.
Note 1: Specification for packaged product only.
2: Refer to “MIC4416 Timing Definitions” and “MIC4417 Timing Definitions” diagrams.