Datasheet
2012-2018 Microchip Technology Inc. DS20002300C-page 4
MCP7951X/MCP7952X
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS ...........................................................................................................-0.6V to VCC+1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias...............................................................................................................-40°C to +85°C
ESD protection on all pins.......................................................................................................................................... 4 kV
TABLE 1-1: DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I): T
A = -40°C to +85°C VCC = 1.8V to 3.6V
Param.
No.
Symbol Characteristic Min. Typ.
(2)
Max. Units Test Conditions
D1 V
IH High-Level Input Voltage 0.7 VCC —VCC + 1 V
D2 V
IL Low-Level Input Voltage -0.3 — 0.3VCC VVCC≥2.5V
-0.3 — 0.2V
CC VCC < 2.5V
D3 V
OL Low-Level Output Voltage — — 0.4 V IOL = 2.1 mA, VCC ≥2.5V
——0.2 I
OL = 1.0 mA, VCC < 2.5V
D4 V
OH High-Level Output Voltage VCC - 0.5 — — V IOH = -400 µA
D5 I
LI Input Leakage Current — — ±1 µA CS = VCC, VIN = VSS or
V
CC
D6 ILO Output Leakage Current — — ±1 µA CS = VCC, VOUT = VSS or
V
CC
D7 CINT Pin Capacitance
(all inputs and outputs)
——7pFVCC = 3.6V (Note 1)
T
A = 25°C, f = 1 MHz
D8 C
OSC Oscillator Pin Capacitance
(X1, X2 pins)
—3—pFNote 1
D9 I
CCEERD EEPROM Operating Current — — 3 mA VCC = 3.6V, FCLK = 5 MHz
SO = Open
I
CCEEWR ——5mAVCC = 3.6V
D10 I
CCREAD SRAM/RTCC Operating
Current
——3mAVCC = 3.6V, FCLK = 5 MHz
SO = Open
I
CCWRITE ——3mAVCC = 3.6V, FCLK = 5 MHz
D11 I
CCDAT Vcc Data Retention Current
(oscillator off)
——1µAVCC = 3.6V
Note 1: This parameter is not tested but ensured by characterization.
2: Typical measurements taken at room temperature.