Datasheet

© 2007 Microchip Technology Inc. DS21812E-page 3
MCP6291/1R/2/3/4/5
AC ELECTRICAL SPECIFICATIONS
MCP6293/MCP6295 CHIP SELECT (CS) SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.4V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
, C
L
= 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 10.0 — MHz
Phase Margin at Unity-Gain PM — 65 — ° G = +1 V/V
Slew Rate SR — 7 — V/µs
Noise
Input Noise Voltage E
ni
—4.2— µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—8.7—nV/√Hz f = 10 kHz
Input Noise Current Density i
ni
—3—fA/√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.4V to +5.5V, V
SS
= GND, V
CM
=V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
, C
L
= 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters Sym Min Typ Max Units Conditions
CS
Low Specifications
CS
Logic Threshold, Low V
IL
V
SS
—0.2V
DD
V
CS
Input Current, Low I
CSL
—0.01— µACS = V
SS
CS High Specifications
CS
Logic Threshold, High V
IH
0.8 V
DD
—V
DD
V
CS
Input Current, High I
CSH
—0.7 2 µACS = V
DD
GND Current per Amplifier I
SS
—-0.7— µACS = V
DD
Amplifier Output Leakage — — 0.01 — µA CS = V
DD
Dynamic Specifications (Note 1)
CS
Low to Valid Amplifier Output,
Turn-on Time
t
ON
—410µsCS Low ≤ 0.2 V
DD
, G = +1 V/V,
V
IN
= V
DD
/2, V
OUT
= 0.9 V
DD
/2,
V
DD
= 5.0V
CS
High to Amplifier Output High-Z t
OFF
—0.01— µsCS High ≥ 0.8 V
DD
, G = +1 V/V,
V
IN
= V
DD
/2, V
OUT
= 0.1 V
DD
/2
Hysteresis V
HYST
—0.6— VV
DD
= 5V
Note 1: The input condition (V
IN
) specified applies to both op amp A and B of the MCP6295. The dynamic specification is tested
at the output of op amp B (V
OUTB
).