Datasheet

 2001-2013 Microchip Technology Inc. DS21669D-page 3
MCP6041/2/3/4
AC ELECTRICAL CHARACTERISTICS
MCP6043 CHIP SELECT (CS
) ELECTRICAL CHARACTERISTICS
FIGURE 1-1: Chip Select (CS) Timing
Diagram (MCP6043 only).
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
=V
DD
/2,
V
OUT
 V
DD
/2, V
L
=V
DD
/2, R
L
= 1 Mto V
L
, and C
L
= 60 pF (refer to Figure 1-2 and Figure 1-3).
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 14 — kHz
Slew Rate SR — 3.0 — V/ms
Phase Margin PM — 65 — ° G = +1 V/V
Noise
Input Voltage Noise E
ni
—5.0—µV
P-P
f = 0.1 Hz to 10 Hz
Input Voltage Noise Density e
ni
— 170 — nV/Hz f = 1 kHz
Input Current Noise Density i
ni
—0.6—fA/Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.4V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
=V
DD
/2,
V
OUT
 V
DD
/2, V
L
=V
DD
/2, R
L
= 1 Mto V
L
, and C
L
= 60 pF (refer to Figure 1-2 and Figure 1-3).
Parameters Sym Min Typ Max Units Conditions
CS Low Specifications
CS
Logic Threshold, Low V
IL
V
SS
—V
SS
+0.3 V
CS
Input Current, Low I
CSL
—5—pACS = V
SS
CS High Specifications
CS
Logic Threshold, High V
IH
V
DD
–0.3 — V
DD
V
CS
Input Current, High I
CSH
—5—pACS = V
DD
CS Input High, GND Current I
SS
—-20—pACS = V
DD
Amplifier Output Leakage, CS High I
OLEAK
—20—pACS = V
DD
Dynamic Specifications
CS
Low to Amplifier Output Turn-on Time t
ON
— 2 50 ms G = +1V/V, CS = 0.3V to
V
OUT
= 0.9V
DD
/2
CS
High to Amplifier Output High-Z t
OFF
— 10 — µs G = +1V/V, CS = V
DD
–0.3V to
V
OUT
= 0.1V
DD
/2
Hysteresis V
HYST
—0.6— VV
DD
= 5.0V
V
IL
High-Z
t
ON
V
IH
CS
t
OFF
V
OUT
-20 pA
High-Z
I
SS
I
CS
5pA
-20 pA
-0.6 µA
(typical)
(typical)
(typical)
(typical)