Datasheet

 2005-2014 Microchip Technology Inc. DS20001950F-page 3
MCP3550/1/3
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
...................................................................................7.0V
All inputs and outputs w.r.t V
SS
.... .......... -0.3V to V
DD
+ 0.3V
Difference Input Voltage ....................................... |V
DD
- V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±10 mA
Storage Temperature ....................................-65°C to +150°C
Ambient temp. with power applied ................-55°C to +125°C
ESD protection on all pins (HBM, MM)  6kV, 400V
Maximum Junction Temperature (T
J
). .........................+150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those indi-
cated in the operation listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply at -40°C  T
A
 +85°C, V
DD
= 2.7V or 5.0V.
V
REF
= 2.5V. V
IN
+ = V
IN
- = V
CM
= V
REF
/2. All ppm units use 2*V
REF
as full scale range. Unless otherwise noted, specification
applies to entire MCP3550/1/3 family.
Parameters Sym. Min. Typ. Max. Units Conditions
Noise Performance (MCP3550/1)
No Missing Codes NMC 22 — — bits At DC (Note 5)
Output Noise e
N
—2.5— µV
RMS
Effective Resolution ER — 21.9 — bits RMS V
REF
= 5V
Noise Performance (MCP3553)
No Missing Codes NMC 20 — — bits At DC (Note 5)
Output Noise e
N
—6—µV
RMS
Effective Resolution ER — 20.6 — bits RMS V
REF
= 5V
Conversion Times
MCP3550-50 t
CONV
-2.0% 80 +2.0% ms
MCP3550-60 t
CONV
-2.0% 66.67 +2.0% ms
MCP3551 t
CONV
-2.0% 73.1 +2.0% ms
MCP3553 t
CONV
-2.0% 16.67 +2.0% ms
Accuracy
Integral Non-Linearity INL — ±2 6 ppm T
A
= +25°C only (Note 2)
Offset Error V
OS
-12 ±3 +12 µV T
A
= +25°C
—±4— µVT
A
= +85°C
—±6— µVT
A
= +125°C
Positive Full-Scale Error V
FS,P
-10 ±2 +10 ppm T
A
= +25°C only
Negative Full-Scale Error V
FS,N
-10 ±2 +10 ppm T
A
= +25°C only
Offset Drift — 0.040 — ppm/°C
Positive/Negative Full-Scale Error
Drift
— 0.028 — ppm/°C
Note 1: This parameter is established by characterization and not 100% tested.
2: INL is the difference between the endpoint’s line and the measured code at the center of the quantization band.
3: This current is due to the leakage current and the current due to the offset voltage between V
IN
+ and V
IN
-.
4: Input impedance is inversely proportional to clock frequency; typical values are for the MCP3550/1 device. V
REF
=5V.
5: Characterized by design, but not tested.
6: Rejection performance depends on internal oscillator accuracy; see Section 4.0 “Device Overview” for more informa-
tion on oscillator and digital filter design. MCP3550/1 device rejection specifications characterized from 49 to 61 Hz.