Datasheet
2002-2017 Microchip Technology Inc. DS20001732E-page 3
MCP3221
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
...........................................................................................................................................................................+7.0V
Analog input pin w.r.t. V
SS
..................................................................................................................-0.6V to V
DD
+0.6V
SDA and SCL pins w.r.t. V
SS
...............................................................................................................-0.6V to V
DD
+1.0V
Storage Temperature ............................................................................................................................. -65°C to +150°C
Ambient Temperature with power applied ...............................................................................................-65°C to +125°C
Maximum Junction Temperature ........................................................................................................................... +150°C
ESD protection on all pins (HBM) .......................................................................................................................... ≥ 4kV
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, all parameters apply at V
DD
= 5.0V, V
SS
= GND, R
PU
= 2 k
T
A
= -40°C to +85°C, I
2
C Fast Mode Timing: f
SCL
= 400 kHz (Note 3).
Parameter Sym. Min. Typ. Max. Units Conditions
DC Accuracy
Resolution — 12 bits
Integral Nonlinearity INL — ±0.75 ±2 LSB
Differential Nonlinearity DNL — ±0.5 ±1 LSB No missing codes
Offset Error — — ±0.75 ±2 LSB
Gain Error — — -1 ±3 LSB
Dynamic Performance
Total Harmonic Distortion THD — -82 — dB V
IN
= 0.1V to 4.9V @ 1 kHz
Signal-to-Noise and Distortion SINAD — 72 — dB V
IN
= 0.1V to 4.9V @ 1 kHz
Spurious Free Dynamic Range SFDR — 86 — dB V
IN
= 0.1V to 4.9V @ 1 kHz
Analog Input
Input Voltage Range — V
SS
-0.3 — V
DD
+0.3 V 2.7V V
DD
5.5V
Leakage Current — -1 — +1 µA
SDA/SCL (open-drain output)
Data Coding Format — Straight Binary —
High-Level Input Voltage V
IH
0.7 V
DD
——V
Low-Level Input Voltage V
IL
— — 0.3 V
DD
V
Low-Level Output Voltage V
OL
——0.4VI
OL
= 3 mA, R
PU
= 1.53 k
Hysteresis of Schmitt Trigger Inputs V
HYST
—0.05V
DD
—Vf
SCL
= 400 kHz only
Input Leakage Current I
LI
-1 — +1 µA V
IN
= 0.1 V
DD
and 0.9 V
DD
Output Leakage Current I
LO
-1 — +1 µA V
OUT
= 0.1 V
SS
and
0.9 V
DD
Note 1: Sample time is the time between conversions once the address byte has been sent to the converter. Refer
to Figure 5-6.
2: This parameter is periodically sampled and not 100% tested.
3: R
PU
= Pull-up resistor on SDA and SCL.
4: SDA and SCL = V
SS
to V
DD
at 400 kHz.
5: t
ACQ
and t
CONV
are dependent on internal oscillator timing. See Figure 5-5 and Figure 5-6 in relation to
SCL.