Datasheet

MCP2003/4
DS22230A-page 14 2010 Microchip Technology Inc.
2.3 AC Specifications
AC CHARACTERISTICS
V
BB = 6.0V to 27.0V; TA = -40°C to +125°C
Parameter Sym Min. Typ. Max. Units Test Conditions
Bus Interface – Constant Slope Time Parameters
Slope rising and falling
edges
tslope 3.5 22.5 µs 7.3V <= V
BB <= 18V
Propagation Delay of
Transmitter
ttranspd 4.0 µs ttranspd = max (ttranspdr or ttranspdf)
Propagation Delay of
Receiver
trecpd 6.0 µs trecpd = max (trecpdr or trecpdf)
Symmetry of Propagation
Delay of Receiver rising
edge w.r.t. falling edge
trecsym -2.0 2.0 µs trecsym = max (trecpdf – trecpdr)
Symmetry of Propagation
Delay of Transmitter rising
edge w.r.t. falling edge
ttrans-
sym
-2.0 2.0 µs ttranssym = max (ttranspdf - ttranspdr)
Time to sample of FAULT/
TXE for bus conflict reporting
tfault 32.5 µs tfault = max (ttranspd + tslope + trecpd)
Duty Cycle 1 @20.0 kbit/sec 39.6 %tbit Cbus;Rbus conditions:
1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W
THrec(max) = 0.744 x V
BB,
THdom(max) = 0.581 x V
BB,
V
BB =7.0V-18V; tbit = 50 µs
D1 = tbus_rec(min) / 2 x tbit)
Duty Cycle 2 @20.0 kbit/sec 58.1 %tbit Cbus;Rbus conditions:
1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W
THrec(max) = 0.284 x V
BB,
THdom(max) = 0.422 x V
BB,
V
BB =7.6V-18V; tbit = 50 µs
D2 = tbus_rec(max) / 2 x tbit)
Duty Cycle 3 @10.4 kbit/sec 41.7 %tbit Cbus;Rbus conditions:
1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W
THrec(max) = 0.778 x V
BB,
THdom(max) = 0.616 x V
BB,
V
BB =7.0V-18V; tbit = 96 µs
D3 = tbus_rec(min) / 2 x tbit)
Duty Cycle 4 @10.4 kbit/sec 59.0 %tbit Cbus;Rbus conditions:
1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W
THrec(max) = 0.251 x V
BB,
THdom(max) = 0.389 x V
BB,
V
BB =7.6V-18V; tbit = 96 µs
D4 = tbus_rec(max) / 2 x tbit)
Wake-up Timing
Bus Activity Debounce time tBDB 5 20 µs Bus debounce time, 10 µs typical
Bus Activity to Vren on tBACTVE 35 150 µs After Bus debounce time, 52 µs typical
WAKE to Vren on tWAKE
150 µs
Chip Select to Vren on
tCSOR 150 µs
Vren floating
Chip Select to Vren off tCSPD 80 µs Vren floating