Datasheet

MCP1755/1755S
DS25160A-page 6  2012 Microchip Technology Inc.
Output Voltage Regulation V
OUT
V
R
–
2.0%
V
R
+0.85% V
R
+2.0
%
V Note 2
V
OUT
Temperature
Coefficient
TCV
OUT
— 35 ppm/°C Note 3
Line Regulation V
OUT
/
(V
OUT
x V
IN
)
-0.05 ±0.01 +0.05 %/V V
R
+1V V
IN
 16V
Load Regulation V
OUT
/V
OUT
-0.5 ±0.1 +0.5 %I
L
= 1.0 mA to 300 mA, Note 4
Dropout Voltage (Note 5)V
DROPOUT
— 300 500 mV I
L
= 300 mA
Dropout Current I
DO
—75120 µA V
IN
=0.95V
R
, I
OUT
=0mA
Undervoltage Lockout
Undervoltage Lockout UVLO — 3.0 — V Rising V
IN
Undervoltage Lockout
Hysterisis
UVLO
HYS
— 300 — mV Falling V
IN
Shutdown Input
Logic High Input V
SHDN-HIGH
2.4 —V
IN(MAX)
V
Logic Low Input V
SHDN-LOW
0.0 — 0.8 V
Shutdown Input Leakage
Current
SHDN
ILK
—0.020.2 µA SHDN =16V
Power Good Output
PWRGD Input
Voltage Operating Range
V
PWRGD_VIN
1.7 —V
IN
VI
SINK
=1mA
PWRGD Threshold
Voltage
(Referenced to V
OUT
)
V
PWRGD_TH
90 92 94 %V
OUT
Falling Edge of V
OUT
PWRGD Threshold
Hysteresis
V
PWRGD_HYS
—2.0—%V
OUT
Rising Edge of V
OUT
PWRGD Output
Voltage Low
V
PWRGD_L
—0.20.45 VI
PWRGD_SINK
= 5.0 mA,
V
OUT
=0V
PWRGD Output
Sink Current
I
PWRGD_L
5.0 ——mAV
PWRGD
 0.45V
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V
IN
=V
R
+1V, Note 1,
I
LOAD
=1mA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
=+25°C, t
r(VIN)
= 0.5 V/µs, SHDN =V
IN
,
PWRGD = 10K to V
OUT
. Boldface type applies for junction temperatures, T
J
(Note 7) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: The minimum V
IN
must meet two conditions: V
IN
 3.6V and V
IN
 V
R
+ V
DROPOUT(MAX)
.
2: V
R
is the nominal regulator output voltage when the input voltage V
IN
=V
Rated
+V
DROPOUT(MAX)
or V
IN
= 3.6V (whichever is
greater); I
OUT
=1mA.
3: TCV
OUT
=(V
OUT-HIGH
–V
OUT-LOW
)x10
6
/(V
R
x 
Temperature
), V
OUT-HIGH
= highest voltage measured over the temperature
range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage
value that was measured with an applied input voltage of V
IN
=V
R
+1V or V
IN
= 3.6V (whichever is greater).
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
, 
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction
temperatures above +150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired
junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient
temperature is not significant.
8: See Section 4.6 “Shutdown Input (SHDN)” and Figure 2-34.