Datasheet

 2012 Microchip Technology Inc. DS25160A-page 7
MCP1755/1755S
PWRGD Leakage Current I
PWRGD_LK
—50200 nA V
PWRGD
Pullup = 10 k to V
IN
V
IN
= 16V
PWRGD Time Delay T
PG
— 100 — µs Rising Edge of V
OUT
Detect Threshold to
PWRGD Active Time
Delay
T
VDET_PWRGD
— 200 — µs Falling Edge of V
OUT
after Transition from
V
OUT
=V
PRWRGD_TH
+50mV
to V
PWRGD_TH
–50 mV,
R
PULLUP
=10k to V
IN
AC Performance
Output Delay from V
IN
to V
OUT
= 90% V
REG
T
DELAY
—200—µsV
IN
=0V to 16V,
V
OUT
=90% V
R
,
t
r(VIN)
=5V/µs,
Output Delay From V
IN
to
V
OUT
> 0.1V
T
DELAY_START
—80—µsV
IN
=0V to 16V,
V
OUT
 0.1V, t
r(VIN)
=5V/µs,
Output Delay From SHDN
(Note 8)
T
DELAY_SHDN
—235—µsV
IN
=6V, V
OUT
=90%V
R
,
V
R
=5V,SHDN = GND to V
IN
—940—µsV
IN
=7V, V
OUT
=90%V
R
,
V
R
=5V, SHDN = GND to V
IN
—210—µsV
IN
=16V,V
OUT
=90%V
R
,
V
R
=5V, SHDN = GND to V
IN
Output Noise e
N
—0.3—µV/(Hz) I
L
=50mA, f=1kHz,
Power Supply Ripple
Rejection Ratio
PSRR — 80 — dB V
R
=5V, f=1kHz,
I
L
= 100 mA, V
INAC
=1V
PK-PK
,
C
IN
=0µF,
V
IN
 V
R
+1.5V 3.6V
Thermal Shutdown
Temperature
T
SD
—150—°CNote 6
Thermal Shutdown
Hysteresis
TSD — 10 — °C
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V
IN
=V
R
+1V, Note 1,
I
LOAD
=1mA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
=+25°C, t
r(VIN)
= 0.5 V/µs, SHDN =V
IN
,
PWRGD = 10K to V
OUT
. Boldface type applies for junction temperatures, T
J
(Note 7) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: The minimum V
IN
must meet two conditions: V
IN
 3.6V and V
IN
 V
R
+ V
DROPOUT(MAX)
.
2: V
R
is the nominal regulator output voltage when the input voltage V
IN
=V
Rated
+V
DROPOUT(MAX)
or V
IN
= 3.6V (whichever is
greater); I
OUT
=1mA.
3: TCV
OUT
=(V
OUT-HIGH
–V
OUT-LOW
)x10
6
/(V
R
x 
Temperature
), V
OUT-HIGH
= highest voltage measured over the temperature
range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage
value that was measured with an applied input voltage of V
IN
=V
R
+1V or V
IN
= 3.6V (whichever is greater).
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
, 
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction
temperatures above +150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired
junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient
temperature is not significant.
8: See Section 4.6 “Shutdown Input (SHDN)” and Figure 2-34.