Datasheet

MCP1640/B/C/D
DS22234A-page 4  2010 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
NMOS Peak Switch Current
Limit
I
N(MAX)
600 850 — mA Note 5
V
OUT
Accuracy V
OUT
% -3 — +3 % Includes Line and Load
Regulation; V
IN
= 1.5V
Line Regulation V
OUT
/
V
OUT
) /
V
IN
|
-1 0.01
1
%/V V
IN
= 1.5V to 3V
I
OUT
= 25 mA
Load Regulation V
OUT
/
V
OUT
|
-1 0.01 1 %I
OUT
= 25 mA to 100 mA;
V
IN
= 1.5V
Maximum Duty Cycle DC
MAX
88 90 — %
Switching Frequency f
SW
425 500 575 kHz
EN Input Logic High V
IH
90
——
%of V
IN
I
OUT
= 1 mA
EN Input Logic Low V
IL
——
20 %of V
IN
I
OUT
= 1 mA
EN Input Leakage Current I
ENLK
—
0.005 — µA V
EN
= 5V
Soft-start Time t
SS
—
750
—
µS EN Low to High, 90% of
V
OUT
; Note 4
Thermal Shutdown Die
Temperature
T
SD
—
150
—
C
Die Temperature Hysteresis T
SDHYS
—
10
—
C
Electrical Specifications:
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature
Range
T
J
-40 — +125 °C Steady State
Storage Temperature Range T
A
-65 — +150 °C
Maximum Junction Temperature T
J
— — +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 5L-TSOT23 
JA
— 192 — °C/W EIA/JESD51-3 Standard
Thermal Resistance, 8L-2x3 DFN 
JA
—93 —°C/W
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
IN
= 1.2V, C
OUT
= C
IN
= 10 µF, L = 4.7 µH, V
OUT
=3.3V, I
OUT
=15mA,
T
A
= +25°C.
Boldface specifications apply over the T
A
range of -40
o
C to +85
o
C.
Parameters Sym Min Typ Max Units Conditions
Note 1: 3.3 K resistive load, 3.3V
OUT
(1 mA).
2: For V
IN
> V
OUT
, V
OUT
will not remain in regulation.
3: I
Q
is measured from V
OUT
; V
IN
quiescent current will vary with boost ratio. V
IN
quiescent current can be
estimated by: (I
QPFM
* (V
OUT
/V
IN
)), (I
QPWM
* (V
OUT
/V
IN
)).
4: 220 resistive load, 3.3V
OUT
(15 mA).
5: Peak current limit determined by characterization, not production tested.