Datasheet

 2010 Microchip Technology Inc. DS22234A-page 3
MCP1640/B/C/D
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
EN, FB, V
IN,
V
SW
, V
OUT
- GND...........................+6.5V
EN, FB ...........<greater of V
OUT
or V
IN
> (GND - 0.3V)
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode...........................400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65
o
C to +150
o
C
Ambient Temp. with Power Applied......-40
o
C to +85
o
C
Operating Junction Temperature........-40
o
C to +125
o
C
ESD Protection On All Pins:
HBM........................................................3 kV
MM........................................................300 V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V
IN
= 1.2V, C
OUT
= C
IN
= 10 µF, L = 4.7 µH, V
OUT
=3.3V, I
OUT
=15mA,
T
A
= +25°C.
Boldface specifications apply over the T
A
range of -40
o
C to +85
o
C.
Parameters Sym Min Typ Max Units Conditions
Input Characteristics
Minimum Start-Up Voltage V
IN
—0.65 0.8 VNote1
Minimum Input Voltage After
Start-Up
V
IN
—0.35 — VNote1
Output Voltage Adjust Range V
OUT
2.0 5.5 VV
OUT
 V
IN
; Note 2
Maximum Output Current I
OUT
100
150 — mA 1.2V V
IN
, 2.0V V
OUT
150 — mA 1.5V V
IN
, 3.3V V
OUT
350 — mA 3.3V V
IN
, 5.0V V
OUT
Feedback Voltage V
FB
1.175 1.21 1.245 V—
Feedback Input Bias Current I
VFB
—10 —pA—
Quiescent Current – PFM
Mode
I
QPFM
— 19 30 µA Measured at V
OUT
= 4.0V;
EN = V
IN
, I
OUT
= 0 mA;
Note 3
Quiescent Current – PWM
Mode
I
QPWM
— 220 — µA Measured at V
OUT
; EN = V
IN
I
OUT
= 0 mA; Note 3
Quiescent Current – Shutdown I
QSHDN
—0.7 2.3µAV
OUT
= EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage I
NLK
—0.3 1 µAV
IN
=V
SW
=5V; V
OUT
=
5.5V V
EN
=V
FB
=GND
PMOS Switch Leakage I
PLK
— 0.05 0.2 µA V
IN
=VS
W
= GND;
V
OUT
=5.5V
NMOS Switch ON Resistance R
DS(ON)N
—0.6 —  V
IN
= 3.3V, I
SW
= 100 mA
PMOS Switch ON Resistance R
DS(ON)P
—0.9 —  V
IN
= 3.3V, I
SW
= 100 mA
Note 1: 3.3 K resistive load, 3.3V
OUT
(1 mA).
2: For V
IN
> V
OUT
, V
OUT
will not remain in regulation.
3: I
Q
is measured from V
OUT
; V
IN
quiescent current will vary with boost ratio. V
IN
quiescent current can be
estimated by: (I
QPFM
* (V
OUT
/V
IN
)), (I
QPWM
* (V
OUT
/V
IN
)).
4: 220 resistive load, 3.3V
OUT
(15 mA).
5: Peak current limit determined by characterization, not production tested.