Datasheet

MCP16331
DS20005308B-page 4  2014 Microchip Technology Inc.
EN Input Logic Low V
IL
— — 0.4 V
EN Input Leakage Current I
ENLK
— 0.007 0.5 µA V
IN
= EN = 5V
Soft-Start Time t
SS
— 600 — µs EN Low-to-High, 
90% of V
OUT
Thermal Shutdown Die
Temperature
T
SD
— 160 — C Note 3
Die Temperature Hysteresis T
SDHYS
— 30 — C Note 3
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Junction Temperature Range T
J
-40 — +125 °C Steady State
Storage Temperature Range T
A
-65 — +150 °C
Maximum Junction Temperature T
J
— — +160 °C Transient
Package Thermal Resistances
Thermal Resistance, 6L-SOT-23 
JA
— 190.5 — °C/W EIA/JESD51-3 Standard
Thermal Resistance, 8L-2x3 TDFN 
JA
— 52.5 — °C/W EIA/JESD51-3 Standard
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
- V
SW
= 3.3V, 
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 X 10 µF X7R Ceramic Capacitors
Boldface specifications apply over the T
A
range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage
necessary for regulation. See characterization graphs for typical input to output operating voltage range.
2: V
BOOST
supply is derived from V
OUT
.
3: Determined by characterization, not production tested.
4: This is ensured by design.