Datasheet

 2014 Microchip Technology Inc. DS20005308B-page 3
MCP16331
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN,
SW ............................................................... -0.5V to 54V
BOOST – GND ................................................... -0.5V to 60V
BOOST – SW Voltage........................................ -0.5V to 6.0V
V
FB
Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (V
IN
+ 0.3V)
Output Short Circuit Current .................................Continuous
Power Dissipation .......................................Internally Limited
Storage Temperature ................................... -65
o
C to +150
o
C
Ambient Temperature with Power Applied ... -40
o
C to +125
o
C
Operating Junction Temperature.................. -40
o
C to +160
o
C
ESD Protection on All Pins:
HBM..................................................................... 4 kV
MM ......................................................................300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
- V
SW
= 3.3V, 
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 X 10 µF X7R Ceramic Capacitors
Boldface specifications apply over the T
A
range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Voltage V
IN
4.4 — 50 V Note 1
Feedback Voltage V
FB
0.784 0.800 0.816 V
Output Voltage Adjust Range V
OUT
2.0 — 24 V Note 1, Note 3
Feedback Voltage 
Line Regulation
V
FB
/V
FB
)/V
IN
| — 0.002 0.1 %/V V
IN
= 5V to 50V
Feedback Voltage 
Load Regulation
V
FB
/V
FB
| — 0.13 0.35 % I
OUT
= 50 mA to
500 mA
Feedback Input Bias Current I
FB
— +/- 3 — nA
Undervoltage Lockout Start UVLO
STRT
— 4.1 4.4 V V
IN
Rising
Undervoltage Lockout Stop UVLO
STOP
3 3.6 — V V
IN
Falling
Undervoltage Lockout 
Hysteresis
UVLO
HYS
— 0.5 — V
Switching Frequency f
SW
425 500 550 kHz
Maximum Duty Cycle DC
MAX
90 93 — % V
IN
= 5V; V
FB
= 0.7V;
I
OUT
= 100 mA
Minimum Duty Cycle DC
MIN
— 1 — % Note 4
NMOS Switch On Resistance R
DS(ON)
— 0.6 —  V
BOOST
- V
SW
= 5V,
Note 3
NMOS Switch Current Limit I
N(MAX)
— 1.3 — A V
BOOST
- V
SW
= 5V,
Note 3
Quiescent Current I
Q
— 1 1.7 mA V
IN
= 12V; Note 2
Quiescent Current - Shutdown I
Q
— 6 10 A V
OUT
= EN = 0V
Output Current I
OUT
500 — — mA Note 1; see Figure 2-9
EN Input Logic High V
IH
1.9 — — V
Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage
necessary for regulation. See characterization graphs for typical input to output operating voltage range.
2: V
BOOST
supply is derived from V
OUT
.
3: Determined by characterization, not production tested.
4: This is ensured by design.